Lithography system
    1.
    发明专利
    Lithography system 有权
    LITHOGRAPHIC设备

    公开(公告)号:JP2011146727A

    公开(公告)日:2011-07-28

    申请号:JP2011038507

    申请日:2011-02-24

    CPC classification number: G03F7/709

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus significantly reduced in airflows in a process zone and imaging errors by pressure waves. SOLUTION: The lithographic apparatus includes: an illumination system configured to adjust a radiation beam; a support 1 structured to support a patterning device 2 capable of imparting a pattern to the cross-section of the radiation beam to form a patterned radiation beam; a substrate table 4 structured to hold a substrate 5; a projection system 3 configured to project the patterned radiation beam onto a target portion of the substrate 5; and a shield device 9 arranged between a source of airflows and/or pressure waves and an element sensitive to the airflows and/or pressure waves. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供显着减少处理区中的气流的光刻设备和通过压力波的成像误差。 光刻设备包括:被配置为调节辐射束的照明系统; 支撑件1,其构造成支撑图案形成装置2,其能够对辐射束的横截面赋予图案以形成图案化的辐射束; 构造成保持基板5的基板台4; 投影系统3,被配置为将图案化的辐射束投影到基板5的目标部分上; 以及布置在气流源和/或压力波之间的屏蔽装置9和对气流和/或压力波敏感的元件。 版权所有(C)2011,JPO&INPIT

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