System and method for lithography simulation
    1.
    发明专利
    System and method for lithography simulation 审中-公开
    系统和方法进行算术仿真

    公开(公告)号:JP2010266900A

    公开(公告)日:2010-11-25

    申请号:JP2010188292

    申请日:2010-08-25

    Abstract: PROBLEM TO BE SOLVED: To solve such a problem that complete process simulation and/or analysis of a lithographic process cannot be performed by conventional systems and methods for lithography simulation. SOLUTION: This systen and method employs a lithography simulation system architecture including application-specific hardware accelerators, and a processing technique to facilitate and accelerate verification, characterization and/or inspection of a mask design. The process system includes detailed simulation and characterization of the entire lithography process to verify that the design provides and/or achieves the desired results on a final wafer pattern. The system includes: a general-purpose computing device to perform a case-based logic having branches and inter-dependency in data handling; and an accelerator system to perform a majority of computation-intensive tasks. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:为了解决用于光刻模拟的常规系统和方法不能执行光刻处理的完整过程模拟和/或分析的问题。 解决方案:该系统和方法采用光刻仿真系统架构,包括专用硬件加速器,以及促进和加速掩模设计的验证,表征和/或检验的处理技术。 该工艺系统包括整个光刻工艺的详细的仿真和表征,以验证该设计在最终的晶片图案上提供和/或实现期望的结果。 该系统包括:通用计算设备,用于执行在数据处理中具有分支和相互依赖性的基于情况的逻辑; 以及执行大部分计算密集型任务的加速器系统。 版权所有(C)2011,JPO&INPIT

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