현미경을 위한 반도체 하전 입자 검출기

    公开(公告)号:KR20210008044A

    公开(公告)日:2021-01-20

    申请号:KR20207035295

    申请日:2019-06-04

    Abstract: 검출기에는감지요소어레이가제공될수 있다. 검출기는어레이를포함하는반도체기판, 및검출기에입사되는하전입자의개수를카운트하도록구성된회로를포함할수 있다. 검출기의회로는복수의감지요소로부터의출력을처리하고어레이의감지요소상의하전입자도착이벤트에응답하여카운터를증분시키도록구성될수 있다. 다양한카운팅모드가사용될수 있다. 카운팅은에너지범위를기초로할 수있다. 특정에너지범위에서하전입자의개수가카운트될수 있고, 감지요소에서오버플로우(overflow)에직면할때 오버플로우플래그(flag)가설정될수 있다. 회로는각각의감지요소에서발생하는각각의하전입자도착이벤트의타임스탬프를결정하도록구성될수 있다. 감지요소의크기는하전입자카운팅을가능하게하는기준에기초하여결정될수 있다.

    SEMICONDUCTOR CHARGED PARTICLE DETECTOR FOR MICROSCOPY

    公开(公告)号:SG11202011505RA

    公开(公告)日:2020-12-30

    申请号:SG11202011505R

    申请日:2019-06-04

    Abstract: A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Patent Agency Ranking