公开(公告)号：KR20200130441A

公开(公告)日：2020-11-18

申请号：KR20207029918

申请日：2019-03-21

Applicant: ASML NETHERLANDS BV

Inventor： WANG YONGXIN ,  DONG ZHONGHUA

IPC: H01J37/244 ,  H01L27/146

Abstract: 검출기및 검출시스템이개시된다. 소정실시예들에따르면, 검출기는제 1 감지요소(402) 및제 2 감지요소(403)를포함한복수의감지요소들을포함하는기판을포함하고, 적어도제 1 감지요소는삼각형형상으로형성된다. 검출기는제 1 감지요소및 제 2 감지요소를연결하도록구성되는스위칭구역(4009A)을포함할수 있다. 또한, 제 1 복수의감지요소들을제 1 출력에연결하는제 1 섹션및 제 2 복수의감지요소들을제 2 출력에연결하는제 2 섹션을포함한복수의섹션들이제공될수 있다. 섹션은육각형형상으로제공될수 있다.

公开(公告)号：KR20200125701A

公开(公告)日：2020-11-04

申请号：KR20207028380

申请日：2019-03-14

Applicant: ASML NETHERLANDS BV

Inventor： WANG YONGXIN ,  DONG ZHONGHUA ,  LAI RUI LING

IPC: H01J37/244 ,  H01L27/146

Abstract: 검출기들및 검출시스템들이개시된다. 기판이제 1 복수의감지요소들및 제 2 복수의감지요소들을포함하는복수의감지요소들(311 내지 313)을포함하고, 복수의섹션들(321 내지 324)이제 1 복수의감지요소들을출력에연결하고제 2 복수의감지요소들을출력에연결하도록구성된다. 스위칭구역들이감지요소들사이에제공될수 있고, 이는 2 이상의감지요소들을연결하도록구성된다. 스위칭구역은사전설정된양의에너지및/또는빔 세기로전자들을수용하는감지요소들에응답하여발생되는신호들에기초하여제어될수 있다.

公开(公告)号：KR20210008044A

公开(公告)日：2021-01-20

申请号：KR20207035295

申请日：2019-06-04

Applicant: ASML NETHERLANDS BV

Inventor： WANG YONGXIN ,  DONG ZHONGHUA ,  LAI RUI LING ,  KANAI KENICHI

IPC: H01J37/244 ,  G01T1/24 ,  H01J37/28 ,  H01J37/285 ,  H01L31/08

Abstract: 검출기에는감지요소어레이가제공될수 있다. 검출기는어레이를포함하는반도체기판, 및검출기에입사되는하전입자의개수를카운트하도록구성된회로를포함할수 있다. 검출기의회로는복수의감지요소로부터의출력을처리하고어레이의감지요소상의하전입자도착이벤트에응답하여카운터를증분시키도록구성될수 있다. 다양한카운팅모드가사용될수 있다. 카운팅은에너지범위를기초로할 수있다. 특정에너지범위에서하전입자의개수가카운트될수 있고, 감지요소에서오버플로우(overflow)에직면할때 오버플로우플래그(flag)가설정될수 있다. 회로는각각의감지요소에서발생하는각각의하전입자도착이벤트의타임스탬프를결정하도록구성될수 있다. 감지요소의크기는하전입자카운팅을가능하게하는기준에기초하여결정될수 있다.

公开(公告)号：IL317749A

公开(公告)日：2025-02-01

申请号：IL31774924

申请日：2024-12-16

Applicant: ASML NETHERLANDS BV ,  MOON EUNSEONG ,  WANG YONGXIN ,  LAI RUI LING ,  VESSAL FARHANG ,  LENG CHONGYANG

Inventor： MOON EUNSEONG ,  WANG YONGXIN ,  LAI RUI-LING ,  VESSAL FARHANG ,  LENG CHONGYANG

IPC: H10D84/85

Abstract: Systems, apparatuses, and methods include a detector including a detection element (400) including a portion of a silicon substrate (402) comprising: a front side (410) of the portion of the silicon substrate including a PIN diode that comprises a p-type region (404a) and an n-type region (403a); a back side (420) of the portion of the silicon substrate, opposite of the front side, comprising a substantially uniform surface; and a layer (421) on the back side of the portion of the silicon substrate; wherein: a region between the p-type region and the n-type region is configured to form a depletion region (407) when a reverse bias is applied between the p-type region (404a) and the n-type region (403a), and the PIN diode is configured to detect an electron that enters the back side of the portion of the silicon substrate and passes through the portion of the silicon substrate to the depletion region.

公开(公告)号：SG11202011505RA

公开(公告)日：2020-12-30

申请号：SG11202011505R

申请日：2019-06-04

Applicant: ASML NETHERLANDS BV

Inventor： WANG YONGXIN ,  DONG ZHONGHUA ,  LAI RUI-LING ,  KANAI KENICHI

IPC: H01J37/244

Abstract: A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.