公开(公告)号：WO2016030255A2

公开(公告)日：2016-03-03

申请号：PCT/EP2015069062

申请日：2015-08-19

Applicant: ASML NETHERLANDS BV

Inventor： BHATTACHARYYA KAUSTUVE ,  VAN BUEL HENRICUS WILHELMUS MARIA ,  FOUQUET CHRISTOPHE DAVID ,  SMILDE HENDRIK JAN HIDDE ,  VAN DER SCHAAR MAURITS ,  DEN BOEF ARIE JEFFREY ,  VAN HAREN RICHARD JOHANNES FRANCISCUS ,  LIU XING LAN ,  BELTMAN JOHANNES MARCUS MARIA ,  FUCHS ANDREAS ,  ADAM OMER ABUBAKER OMER ,  KUBIS MICHAEL ,  JAK MARTIN JACOBUS JOHAN

IPC: G03F7/20

CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 不同于第二子目标的设计，包括具有与第二子目标周期结构不同的节距，特征宽度，空间宽度和/或分割的第一子目标周期性结构的不同设计，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层周围的第二层中的第一周期结构下方，并且在第二层周期结构之下不存在周期性结构 在所述第二层中，并且第四周期性结构至少部分地位于所述第二层下面的第三层中的所述第二周期性结构下方。 一种设计这样的测量目标的方法，包括在辅助目标的周围定位辅助特征，所述辅助特征被配置为减小在所述子目标的周边处的测量的强度峰值。

公开(公告)号：NL2013668A

公开(公告)日：2015-07-13

申请号：NL2013668

申请日：2014-10-23

Applicant: ASML NETHERLANDS BV

Inventor： CEKLI HAKKI ERGÜN ,  LIU XING LAN ,  SLOTBOOM DAAN MAURITS ,  TEL WIM TJIBBO ,  SANDEN STEFAN CORNELIS THEODORUS ,  HAREN RICHARD JOHANNES FRANCISCUS

IPC: H01L21/68 ,  G03F7/20

Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.