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    DEVICE MANUFACTURING METHOD AND ASSOCIATED LITHOGRAPHIC APPARATUS, INSPECTION APPARATUS, AND LITHOGRAPHIC PROCESSING CELL
    2.
    发明申请
    DEVICE MANUFACTURING METHOD AND ASSOCIATED LITHOGRAPHIC APPARATUS, INSPECTION APPARATUS, AND LITHOGRAPHIC PROCESSING CELL 审中-公开
    设备制造方法和相关的光刻设备，检查设备和光刻处理单元

    公开(公告)号：WO2013087431A2

    公开(公告)日：2013-06-20

    申请号：PCT/EP2012074163

    申请日：2012-11-30

    Applicant: ASML NETHERLANDS BV

    Inventor： DEN BOEF ARIE ,  BHATTACHARYYA KAUSTUVE ,  JAK MARTIN ,  KUBIS MICHAEL

    IPC: G03F9/00 ,  G03F7/20

    CPC classification number: G01B11/24 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  G03F9/7092

    Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

    Abstract translation: 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。

    METROLOGY METHOD, TARGET AND SUBSTRATE
    3.
    发明申请
    METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
    计量方法，目标和底物

    公开(公告)号：WO2016030255A2

    公开(公告)日：2016-03-03

    申请号：PCT/EP2015069062

    申请日：2015-08-19

    Applicant: ASML NETHERLANDS BV

    Inventor： BHATTACHARYYA KAUSTUVE ,  VAN BUEL HENRICUS WILHELMUS MARIA ,  FOUQUET CHRISTOPHE DAVID ,  SMILDE HENDRIK JAN HIDDE ,  VAN DER SCHAAR MAURITS ,  DEN BOEF ARIE JEFFREY ,  VAN HAREN RICHARD JOHANNES FRANCISCUS ,  LIU XING LAN ,  BELTMAN JOHANNES MARCUS MARIA ,  FUCHS ANDREAS ,  ADAM OMER ABUBAKER OMER ,  KUBIS MICHAEL ,  JAK MARTIN JACOBUS JOHAN

    IPC: G03F7/20

    CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

    Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 不同于第二子目标的设计，包括具有与第二子目标周期结构不同的节距，特征宽度，空间宽度和/或分割的第一子目标周期性结构的不同设计，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层周围的第二层中的第一周期结构下方，并且在第二层周期结构之下不存在周期性结构 在所述第二层中，并且第四周期性结构至少部分地位于所述第二层下面的第三层中的所述第二周期性结构下方。 一种设计这样的测量目标的方法，包括在辅助目标的周围定位辅助特征，所述辅助特征被配置为减小在所述子目标的周边处的测量的强度峰值。

    A METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM
    4.
    发明申请
    A METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM 审中-公开
    确定对准标记的有效性以校正重叠的方法，以及地平线设备和叠加测量系统的组合

    公开(公告)号：WO2013178404A3

    公开(公告)日：2014-03-20

    申请号：PCT/EP2013058375

    申请日：2013-04-23

    Applicant: ASML NETHERLANDS BV

    Inventor： LYULINA IRINA ,  BIJNEN FRANCISCUS ,  EDART REMI ,  KIERS ANTOINE ,  KUBIS MICHAEL

    IPC: G03F9/00 ,  G03F7/20

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

    Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

    Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

    METHOD AND APPARATUS FOR DETERMINING AN OVERLAY ERROR.
    5.
    发明专利
    METHOD AND APPARATUS FOR DETERMINING AN OVERLAY ERROR. 未知

    公开(公告)号：NL2007088A

    公开(公告)日：2012-01-23

    申请号：NL2007088

    申请日：2011-07-12

    Applicant: ASML NETHERLANDS BV

    Inventor： SCHAAR MAURITS ,  BOEF ARIE ,  FUCHS ANDREAS ,  COOGANS MARTYN ,  BHATTACHARYYA KAUSTUVE ,  MORGAN STEPHEN PETER ,  KUBIS MICHAEL

    IPC: G01N21/47 ,  G03F7/20

    Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

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