公开(公告)号：JP2004179663A

公开(公告)日：2004-06-24

申请号：JP2003397604

申请日：2003-11-27

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： LOWISCH MARTIN ,  DIERICHS MARCEL MATHIJS THEODO ,  VAN INGEN SCHENAU KOEN ,  VAN DER LAAN HANS ,  LEENDERS MARTINUS HENDRIKUS AN ,  MCGOO ELAINE ,  MICKAN UWE

IPC: G03F1/24 ,  G03F7/20 ,  G03F7/22 ,  G03F9/02 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/70283 ,  G03F7/706

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a device that has corrected the distortion in formed images produced because of the use of a reflective mask having a thick absorbing layer and inclined lighting in a lithography device that uses extreme ultraviolet rays as projection beams.
SOLUTION: The distortion induced by the reflective mask (MA), on the absorbing layer of which a mask pattern has been embodied, and the inclined lighting is calculated and aberration in a projection system (PL) is introduced and/or controlled in order to correct the distortion. Since this can be done by the control of the optical elements already present in the projection system (MA), there is no need to modify the device. In Zernike polynomial, it is desirable that the aberrations described above are Z2 (inclination of X), Z3 (inclination of Y), or Z7 (frame X).
COPYRIGHT: (C)2004,JPO

公开(公告)号：SG135931A1

公开(公告)日：2007-10-29

申请号：SG2003068699

申请日：2003-11-24

Applicant: ASML NETHERLANDS BV ,  ZEISS CARL SMT AG

Inventor： LOWISCH MARTIN ,  DIERICHS MARCEL MATHIJS THEODO ,  VAN INGEN SCHENAU KOEN ,  VAN DER LAAN HANS ,  LEENDERS MARTINUS HENDRIKUS AN ,  MCGOO ELAINE ,  MICKAN UWE

IPC: G03F1/24 ,  G03F7/20 ,  G03F7/22 ,  G03F9/02 ,  H01L21/027 ,  G03F1/14

Abstract: System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z5 astigmatism, Z9 spherical, and Z12 astigmatism.

公开(公告)号：DE60321883D1

公开(公告)日：2008-08-14

申请号：DE60321883

申请日：2003-11-25

Applicant: ASML NETHERLANDS BV

Inventor： LOWISCH MARTIN ,  DIERICHS MARCEL MATHIJS THEODO ,  VAN INGEN SCHENAU KOEN ,  VAN DER LAAN HANS ,  LEENDERS MARTINUS HENDRIKUS AN ,  MCGOO ELAINE ,  MICKAN UWE

IPC: G03F7/20 ,  G03F1/24 ,  G03F7/22 ,  G03F9/02 ,  H01L21/027

Abstract: System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z 5 astigmatism, Z 9 spherical, and Z 12 astigmatism.