公开(公告)号：JP2009290210A

公开(公告)日：2009-12-10

申请号：JP2009123725

申请日：2009-05-22

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： SAHA NILAY ,  PEN HERMEN FOLKEN

IPC: H01L21/027

CPC classification number: G03F7/70916 ,  G01N21/9501 ,  G03F7/70525 ,  G03F7/70533 ,  G03F7/70641 ,  G03F7/7065 ,  G03F7/7085

Abstract: PROBLEM TO BE SOLVED: To provide an improved method and apparatus for detecting defects inside a substrate. SOLUTION: The method of determining defects in the substrate includes a step to scan the scan range of the substrate by using a sensor projecting a radiation bean on the substrate; a step to measure the proportion of the intensity of the radiation reflected from different substrate areas respectively along the scan range; a step to find out the variations of the measured proportion across the scan range; and a step to determine from the variations whether there are defects inside the substrate or not. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供用于检测衬底内的缺陷的改进的方法和装置。 解决方案：确定衬底中的缺陷的方法包括通过使用将辐射豆投射到衬底上的传感器来扫描衬底的扫描范围的步骤; 测量沿着扫描范围分别从不同衬底区域反射的辐射强度的比例的步骤; 找出扫描范围内测量比例的变化的步骤; 以及根据变化来确定衬底内部是否存在缺陷的步骤。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：SG131040A1

公开(公告)日：2007-04-26

申请号：SG2006060875

申请日：2006-09-05

Applicant: ASML NETHERLANDS BV

Inventor： ZAAL KOEN JACOBUS JOHANNES MAR ,  DE KORT ANTONIUS JOHANNES ,  DE JONG FREDERIK EDUARD ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS ,  PEN HERMEN FOLKEN

Abstract: In calibration of overlay performance of an immersion lithographic apparatus, two sets of overlay data are obtained from exposures carried out using normal and reversed meanders. The two data sets can then be used to eliminate effects due to wafer cooling.

公开(公告)号：SG157313A1

公开(公告)日：2009-12-29

申请号：SG2009033317

申请日：2009-05-14

Applicant: ASML NETHERLANDS BV

Inventor： SAHA NILAY ,  PEN HERMEN FOLKEN

Abstract: Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan range; determining the variations of the measured fraction across the scan range; determining from the variations whether any defects are present in the substrate.