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    SENSOR AND LITHOGRAPHIC APPARATUS
    1.
    发明申请
    SENSOR AND LITHOGRAPHIC APPARATUS 审中-公开
    传感器和光刻设备

    公开(公告)号：WO2014067754A2

    公开(公告)日：2014-05-08

    申请号：PCT/EP2013071080

    申请日：2013-10-09

    Applicant: ASML NETHERLANDS BV

    Inventor： NIHTIANOV STOYAN ,  KOK HAICO ,  WEHRENS MARTIJN

    IPC: G03F7/20

    CPC classification number: H01L27/1464 ,  G03F7/70558 ,  G03F7/7085 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

    Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

    Abstract translation: 一种背照式传感器，包括支撑衬底，包括光电二极管的半导体层，所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体区域和p掺杂半导体区域，其中耗尽区域形成在 n掺杂半导体区域和p掺杂半导体区域，以及设置在半导体层的第二表面上的p-掺杂保护材料层，其中半导体层的第一表面被固定到 支撑基材。

    RADIATION DETECTOR.
    2.
    发明专利
    RADIATION DETECTOR. 未知

    公开(公告)号：NL2005249A

    公开(公告)日：2011-03-28

    申请号：NL2005249

    申请日：2010-08-19

    Applicant: ASML NETHERLANDS BV

    Inventor： ROOIJAKKERS WILHELMUS ,  WEHRENS MARTIJN

    IPC: G01T1/29 ,  G03F7/20

    Abstract: A method for detecting radiation. The radiation detector includes a plurality of Faraday cups. Each Faraday cup being provided with a cover. Each cover comprising a window arrangement through which the radiation may pass into the Faraday cup. The window arrangement of each cover being different for each Faraday cup. Each Faraday cup housing a target configured to emit photoelectrons if the radiation is incident upon the target.

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