SENSOR AND LITHOGRAPHIC APPARATUS
    1.
    发明申请
    SENSOR AND LITHOGRAPHIC APPARATUS 审中-公开
    传感器和光刻设备

    公开(公告)号:WO2014067754A2

    公开(公告)日:2014-05-08

    申请号:PCT/EP2013071080

    申请日:2013-10-09

    Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

    Abstract translation: 一种背照式传感器,包括支撑衬底,包括光电二极管的半导体层,所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体区域和p掺杂半导体区域,其中耗尽区域形成在 n掺杂半导体区域和p掺杂半导体区域,以及设置在半导体层的第二表面上的p-掺杂保护材料层,其中半导体层的第一表面被固定到 支撑基材。

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