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公开(公告)号:WO2014067754A2
公开(公告)日:2014-05-08
申请号:PCT/EP2013071080
申请日:2013-10-09
Applicant: ASML NETHERLANDS BV
Inventor: NIHTIANOV STOYAN , KOK HAICO , WEHRENS MARTIJN
IPC: G03F7/20
CPC classification number: H01L27/1464 , G03F7/70558 , G03F7/7085 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/028 , H01L31/035281 , H01L31/1804
Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.
Abstract translation: 一种背照式传感器,包括支撑衬底,包括光电二极管的半导体层,所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体区域和p掺杂半导体区域,其中耗尽区域形成在 n掺杂半导体区域和p掺杂半导体区域,以及设置在半导体层的第二表面上的p-掺杂保护材料层,其中半导体层的第一表面被固定到 支撑基材。
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公开(公告)号:NL2007367A
公开(公告)日:2012-05-02
申请号:NL2007367
申请日:2011-09-07
Applicant: ASML NETHERLANDS BV
Inventor: VOOGD ROBBERT JAN , KOK HAICO , MOEST BEARRACH , GILS PETER
IPC: G03F7/20
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公开(公告)号:NL2011568A
公开(公告)日:2014-05-06
申请号:NL2011568
申请日:2013-10-08
Applicant: ASML NETHERLANDS BV
Inventor: NIHTIANOV STOYAN , KOK HAICO , WEHRENS MARTIJN
IPC: G03F7/20 , H01L31/0216
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公开(公告)号:NL2010477A
公开(公告)日:2013-11-25
申请号:NL2010477
申请日:2013-03-19
Applicant: ASML NETHERLANDS BV
Inventor: LAURENT THIBAULT , JACOBS JOHANNES HENRICUS WILHELMUS , KOK HAICO , VIJVER YURI , WAL JOHANNES , KNARREN BASTIAAN , VOOGD ROBBERT JAN , WESTERLAKEN JAN STEVEN CHRISTIAAN , RIJDT HANS , KOOIKER EELCO , HURKENS-MERTENS WILHELMINA MARGARETA JOZEF , TEILLET YOHANN BRUNO YVON
IPC: G03F7/20
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公开(公告)号:NL2005217A
公开(公告)日:2011-02-22
申请号:NL2005217
申请日:2010-08-11
Applicant: ASML NETHERLANDS BV
Inventor: CORBEIJ WILHELMUS , KERKHOF MARCUS , KOK HAICO
IPC: G03F7/20
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