公开(公告)号：NL2006451A

公开(公告)日：2011-11-08

申请号：NL2006451

申请日：2011-03-23

Applicant: ASML NETHERLANDS BV

Inventor： LI CHUNG-HSUN ,  HAREN RICHARD ,  MUSA SAMI ,  DECKERS DAVID ,  WU SHUN-DER

IPC: G03F7/20 ,  H01L23/544

Abstract: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.