Alignment determination system, lithography apparatus, and method of determining alignment in lithography apparatus
    1.
    发明专利
    Alignment determination system, lithography apparatus, and method of determining alignment in lithography apparatus 审中-公开
    对准确定系统,平面设备,以及确定雕刻设备中的对准方法

    公开(公告)号:JP2014132695A

    公开(公告)日:2014-07-17

    申请号:JP2014079408

    申请日:2014-04-08

    Abstract: PROBLEM TO BE SOLVED: To provide an alignment determination system for determining an alignment target on an object that is the alignment determination system capable of providing a better signal to noise ratio.SOLUTION: The present invention provides an alignment determination system for determining an alignment target on an object. The alignment determination system comprises: a lighting source which provides a determining beam towards an object; a detector system which receives the determining beam after being reflected on the object; and a processing unit which determines the alignment based on the determining beam received by the detector system. The determination system comprises: a beam division device; and a polarizing device which polarizes a first beam part and/or a second beam part, or changes the polarization. A polarization angle of the first beam part acquired as a result differs from a polarization angle of the second beam part acquired as a result. The processing unit is configured so as to determine the alignment based on a signal including comparison between the polarized first beam part and the polarized second beam part.

    Abstract translation: 要解决的问题:提供一种用于确定能够提供更好的信噪比的对准确定系统的物体上的对准目标的对准确定系统。解决方案:本发明提供一种用于确定对准目标的对准确定系统 对象上 对准确定系统包括:向物体提供确定光束的照明源; 检测器系统,其在物体上反射之后接收确定光束; 以及处理单元,其基于由所述检测器系统接收的确定波束来确定所述对准。 确定系统包括:分束装置; 以及使第一光束部分和/或第二光束部分偏振或改变偏振的偏振装置。 作为结果获得的第一光束部分的偏振角与获得的第二光束部分的偏振角不同。 处理单元被配置为基于包括偏振的第一光束部分和偏振的第二光束部分之间的比较的信号来确定对准。

    Alignment determination system, lithography apparatus, and method of determining alignment in lithography apparatus
    2.
    发明专利
    Alignment determination system, lithography apparatus, and method of determining alignment in lithography apparatus 有权
    对准确定系统,平面设备,以及确定雕刻设备中的对准方法

    公开(公告)号:JP2012060131A

    公开(公告)日:2012-03-22

    申请号:JP2011196769

    申请日:2011-09-09

    Abstract: PROBLEM TO BE SOLVED: To provide an alignment determination system for determining an alignment target on an object that is the alignment determination system capable of providing a better signal to noise ratio.SOLUTION: The present invention provides an alignment determination system for determining an alignment target on an object. The alignment determination system comprises: a lighting source which provides a determining beam towards an object; a detector system which receives the determining beam after being reflected on the object; and a processing unit which determines the alignment based on the determining beam received by the detector system. The determination system comprises: a beam division device; and a polarizing device which polarizes a first beam part and/or a second beam part, or changes the polarization. A polarization angle of the first beam part acquired as a result differs from a polarization angle of the second beam part acquired as a result. The processing unit is configured so as to determine the alignment based on a signal including comparison between the polarized first beam part and the polarized second beam part.

    Abstract translation: 要解决的问题:提供一种用于确定作为能够提供更好的信噪比的对准确定系统的物体上的对准目标的对准确定系统。 解决方案:本发明提供一种用于确定物体上的对准目标的对准确定系统。 对准确定系统包括:向物体提供确定光束的照明源; 检测器系统,其在物体上反射之后接收确定光束; 以及处理单元,其基于由所述检测器系统接收的确定波束来确定所述对准。 确定系统包括:分束装置; 以及使第一光束部分和/或第二光束部分偏振或改变偏振的偏振装置。 作为结果获得的第一光束部分的偏振角与获得的第二光束部分的偏振角不同。 处理单元被配置为基于包括偏振的第一光束部分和偏振的第二光束部分之间的比较的信号来确定对准。 版权所有(C)2012,JPO&INPIT

    PRODUCTION OF AN ALIGNMENT MARK.
    8.
    发明专利

    公开(公告)号:NL2006451A

    公开(公告)日:2011-11-08

    申请号:NL2006451

    申请日:2011-03-23

    Abstract: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.

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