公开(公告)号：NL2005044A

公开(公告)日：2011-01-31

申请号：NL2005044

申请日：2010-07-07

Applicant: ASML NETHERLANDS BV

Inventor： WANG JIUN-CHENG ,  HAREN RICHARD ,  SCHAAR MAURITS ,  LEE HYUN-WOO ,  JUNGBLUT REINER

IPC: G01N21/47 ,  G03F7/20

Abstract: A mark used in the determination of overlay error comprises sub-features, the sub-features having a smallest pitch approximately equal to the smallest pitch of the product features. The sensitivity to distortions and aberrations is similar as that for the product features. When the mark is developed the sub-features merge and the outline of the larger feature is developed.

公开(公告)号：NL2009345A

公开(公告)日：2013-04-02

申请号：NL2009345

申请日：2012-08-23

Applicant: ASML NETHERLANDS BV

Inventor： SANDEN STEFAN ,  HAREN RICHARD ,  SIMONS HUBERTUS ,  EDART REMI ,  WEI XIUHONG ,  KUBIS MICHAEL ,  LYULINA IRINA

IPC: G03F7/20

公开(公告)号：NL2013417A

公开(公告)日：2015-04-07

申请号：NL2013417

申请日：2014-09-05

Applicant: ASML NETHERLANDS BV

Inventor： YPMA ALEXANDER ,  MENGER JASPER ,  DECKERS DAVID ,  HAN DAVID ,  KOOPMAN ADRIANUS ,  LYULINA IRINA ,  MIDDLEBROOKS SCOTT ,  HAREN RICHARD ,  WILDENBERG JOCHEM

IPC: G03F7/20

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：NL2004216A

公开(公告)日：2010-09-28

申请号：NL2004216

申请日：2010-02-10

Applicant: ASML NETHERLANDS BV

Inventor： BIJNEN FRANCISCUS ,  HAREN RICHARD ,  WEI XIUHONG

IPC: G03F9/00

Abstract: An alignment measurement arrangement includes a source, an optical system and a detector. The source generates a radiation beam with a plurality of wavelength ranges. The optical system receives the radiation beam, produces an alignment beam, directs the alignment beam to a mark located on an object, receives alignment radiation back from the mark, and transmits the received radiation. The detector receives the alignment radiation and detects an image of the alignment mark and outputs a plurality of alignment signals, r, each associated with one of the wavelength ranges. A processor, in communication with the detector, receives the alignment signals, determines signal qualities of the alignment signals; determines aligned positions of the alignment signals, and calculates a position of the alignment mark based on the signal qualities, aligned positions, and a model relating the aligned position to the range of wavelengths and mark characteristics, including mark depth and mark asymmetry.

公开(公告)号：NL2006451A

公开(公告)日：2011-11-08

申请号：NL2006451

申请日：2011-03-23

Applicant: ASML NETHERLANDS BV

Inventor： LI CHUNG-HSUN ,  HAREN RICHARD ,  MUSA SAMI ,  DECKERS DAVID ,  WU SHUN-DER

IPC: G03F7/20 ,  H01L23/544

Abstract: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.

公开(公告)号：NL2009719A

公开(公告)日：2013-06-05

申请号：NL2009719

申请日：2012-10-29

Applicant: ASML NETHERLANDS BV

Inventor： WEI XIUHONG ,  BIJNEN FRANCISCUS ,  HAREN RICHARD ,  KERKHOF MARCUS ,  MOS EVERHARDUS ,  SIMONS HUBERTUS ,  EDART REMI ,  DECKERS DAVID ,  SCHOUMANS NICOLE ,  LYULINA IRINA

IPC: G03F7/20 ,  H01L21/68

公开(公告)号：NL2004948A

公开(公告)日：2011-01-10

申请号：NL2004948

申请日：2010-06-23

Applicant: ASML NETHERLANDS BV

Inventor： HEIJDEN ROBERTUS ,  HAREN RICHARD ,  SCHAAR MAURITS

IPC: G03F7/20

Abstract: A method for providing temporary measurement targets during a multiple patterning process which can be removed in the completion of the process. The metrology target is defined in either the first or the second exposure of a multiple exposure process and whether or not it is temporary or made permanent is selected according to whether or not the area of the target is covered or cleared out in the other exposure. The use of temporary targets reduces the amount of space on the substrate that must be devoted to targets.

公开(公告)号：NL2004531A

公开(公告)日：2010-11-30

申请号：NL2004531

申请日：2010-04-09

Applicant: ASML NETHERLANDS BV ,  ASML HOLDING NV

Inventor： DOYTCHEVA MAYA ,  DUSA MIRCEA ,  HAREN RICHARD ,  SEWELL HARRY ,  HEIJDEN ROBERTUS

IPC: G03F7/20 ,  H01L23/544

公开(公告)号：NL2003785A

公开(公告)日：2010-06-10

申请号：NL2003785

申请日：2009-11-11

Applicant: ASML NETHERLANDS BV

Inventor： HAREN RICHARD ,  SCHAAR MAURITS

IPC: G03F7/20 ,  H01L23/544

Abstract: A marker, for example an alignment marker or an overlay marker is formed in two steps. First, a pattern of two chemically distinct feature types having a pitch comparable to product features is formed. This pattern is then masked by resist in the form of the desired marker, which has a larger pitch than the pattern. Finally, one of the two feature types is selectively etched in the open areas. The result is a marker with a large pitch suitable to be read with long wavelength radiation but the edges of the features are defined in an exposure step having a pitch comparable to the product features.