公开(公告)号：WO2021013519A1

公开(公告)日：2021-01-28

申请号：PCT/EP2020/069001

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  CRAMER, Hugo, Augustinus, Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00 ,  G03F7/20 ,  G03F1/42

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：WO2020048693A1

公开(公告)日：2020-03-12

申请号：PCT/EP2019/070748

申请日：2019-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： SLOTBOOM, Daan, Maurits ,  HEIJMERIKX, Hermannes, Theodorus ,  LOAIZA RIVAS, Javier ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: According to an aspect of the invention there is provided a method of configuring a step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, wherein the method comprises determining a spatial resolution of a patterning correction configured to improve quality of the exposing, and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.

公开(公告)号：WO2017102237A1

公开(公告)日：2017-06-22

申请号：PCT/EP2016/078023

申请日：2016-11-17

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HOOF, Bram ,  COTTAAR, Jeroen

IPC: G03F9/00

CPC classification number: G03F9/7034 ,  G03F9/7092

Abstract: Combination of a stage and a level sensor configured to sense a height level at a target location (T) on an object is described, the stage comprising an object table configured to hold the object and a positioning device for displacing the object table relative to the level sensor in a first direction (Y), the level sensor comprising a projection system configured to project a measurement beam (820) onto a measurement area of the object, the measurement area having a measurement area length (L) in the first direction, a detector system (850) configured to receive different portions (P11, P12, P21, P22, P31, P32) of the measurement beam after being reflected off different sub-areas within the measurement area, the different sub-areas being arranged in the first direction, and to supply output signals representative of the different portions received, a signal processing system (890) configured to process the output signals from the detector system.

Abstract translation: 描述了被配置为感测对象上的目标位置（T）处的高度水平的阶段和水平传感器的组合，所述阶段包括被配置为保持对象的对象表和定位设备 用于在第一方向（Y）上相对于所述水平传感器移动所述物体台，所述水平传感器包括投影系统，所述投影系统被配置成将测量射束（820）投影到所述对象的测量区域上，所述测量区域具有测量区域长度 （L）;检测器系统（850），被配置为在被测量区域内的不同子区域反射之后接收测量光束的不同部分（P11，P12，P21，P22，P31，P32），所述检测器系统 不同的子区域被布置在第一方向上，并且提供代表所接收的不同部分的输出信号，信号处理系统（890），其被配置为处理来自检测器系统的输出信号。

公开(公告)号：WO2021089319A1

公开(公告)日：2021-05-14

申请号：PCT/EP2020/079514

申请日：2020-10-20

Applicant: ASML NETHERLANDS B.V.

Inventor： REININK, Johan ,  COTTAAR, Jeroen ,  DONDERS, Sjoerd, Nicolaas, Lambertus ,  VAN DER POST, Sietse, Thijmen

IPC: G03F7/20 ,  G01B11/27 ,  G01N21/956

Abstract: Apparatus and method for measuring one or more parameters of a substrate (300) using source radiation emitted from a radiation source (100) and directed onto the substrate. The apparatus comprises at least one reflecting element (710a) and at least one detector (720, 721). The at least one reflecting element is configured to receive a reflected radiation resulting from reflection of the source radiation from the substrate and further reflect the reflected radiation into a further reflected radiation. The at least one detector is configured for measurement of the further reflected radiation for determination of at least an alignment of the source radiation and/or the substrate

公开(公告)号：WO2018145803A1

公开(公告)日：2018-08-16

申请号：PCT/EP2017/083707

申请日：2017-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： QUEENS, Rene, Marinus, Gerardus, Johan ,  HENKE, Wolfgang, Helmut ,  DONKERBROEK, Arend, Johannes ,  COTTAAR, Jeroen

IPC: G03F9/00

Abstract: A method of controlling a lithographic apparatus to manufacture a plurality of devices on a substrate, the method comprising: obtaining a parameter map representing a parameter variation across the substrate by measuring the parameter at a plurality of points on the substrate; decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations; deriving a scale factor, configured to correct for errors in measurement of the parameter variation, from measurements of a second parameter of a substrate; and controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.

公开(公告)号：WO2022037877A1

公开(公告)日：2022-02-24

申请号：PCT/EP2021/070261

申请日：2021-07-20

Applicant: ASML NETHERLANDS B.V.

Inventor： COTTAAR, Jeroen

IPC: G02F1/35 ,  G03F7/20

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

公开(公告)号：WO2021121906A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/083682

申请日：2020-11-27

Applicant: ASML NETHERLANDS B.V.

Inventor： NIENHUYS, Han-Kwang ,  COENEN, Teis, Johan ,  ROOBOL, Sander, Bas ,  COTTAAR, Jeroen ,  MOSSAVAT, Seyed Iman ,  GEYPEN, Niels ,  SCHOLZ, Sandy, Claudia ,  PORTER, Christina, Lynn

IPC: G03F7/20 ,  G01N21/95 ,  G06N20/00 ,  G01N2021/95676 ,  G01N21/95623 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G06N3/08

Abstract: Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.

公开(公告)号：WO2021032398A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/070701

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：WO2018065167A1

公开(公告)日：2018-04-12

申请号：PCT/EP2017/072590

申请日：2017-09-08

Applicant: ASML NETHERLANDS B.V.

Inventor： DONKERBROEK, Arend, Johannes ,  COTTAAR, Jeroen ,  THEEUWES, Thomas ,  KOOP, Erik, Johan

IPC: G03F9/00

Abstract: Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.

Abstract translation: 提供了一种测量一个或多个衬底的高度轮廓的方法，包括使用第一传感器装置测量衬底上的一个或多个场的第一高度轮廓，第一高度轮廓是 第一场间部分和第一场内部分;使用第二传感器装置测量所述衬底上或另一衬底上的一个或多个另外的场的第二高度分布，所述第二高度分布是第二场间部分和第二场内部分的总和 从第一传感器布置的测量结果确定平均第一场内部分，并且确定来自第二场间部分和平均第一场内部分的其他场的高度轮廓，从而校正第二传感器布置的测量结果。 >

公开(公告)号：EP4254068A1

公开(公告)日：2023-10-04

申请号：EP22164691.2

申请日：2022-03-28

Applicant: ASML Netherlands B.V.

Inventor： COTTAAR, Jeroen

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method for determining a spatial distribution of a parameter of interest over at least one substrate or portion thereof, the substrate having been subject to a semiconductor manufacturing process, the method comprising obtaining a statistical description (SD) describing an expected characteristic of the parameter of interest and metrology data (MD) related to the parameter of interest. Using the statistical description as a prior and the metrology data as an observation, the spatial distribution of the parameter of interest (CFP) over the at least one substrate or portion thereof is inferred via Bayesian inference.