公开(公告)号：WO2021047841A1

公开(公告)日：2021-03-18

申请号：PCT/EP2020/072473

申请日：2020-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： CUI, Yingchao ,  YAGUBIZADE, Hadi ,  WEI, Xiuhong ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  ROY, Sarathi ,  ZHANG, Yichen ,  KAMALI, Mohammad, Reza ,  KIM, Sang-Uk

IPC: G03F7/20

Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data E1M, E3M, E4M from recurrent monitoring for stability control for the available EUV scanners EUV1, EUV3 and EUV4. For a DUV scanner, second monitoring data D2M, is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data E1M, E3M, E4M are in a first layout. The DUV monitoring data D2M are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing 900, 1000 at least one of the first and second monitoring data into a common layout E1S, E3S, E4S, D2S to allow comparison 802 of the first and second monitoring data.

公开(公告)号：WO2021032398A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/070701

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：EP3796087A1

公开(公告)日：2021-03-24

申请号：EP19198515.9

申请日：2019-09-20

Applicant: ASML Netherlands B.V.

Inventor： CUI, Yingchao ,  YAGUBIZADE, Hadi ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun

IPC: G03F7/20

Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data (E1M, E3M, E4M) from recurrent monitoring for stability control for the available EUV scanners (EUV1, EUV3 and EUV4). For a DUV scanner, second monitoring data (D2M), is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data (E1M, E3M, E4M) are in a first layout. The DUV monitoring data (D2M) are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing (900, 1000) at least one of the first and second monitoring data into a common layout (E1S, E3S, E4S, D2S) to allow comparison (802) of the first and second monitoring data.

公开(公告)号：EP4018263A1

公开(公告)日：2022-06-29

申请号：EP20740656.2

申请日：2020-07-22

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

公开(公告)号：EP3848757A1

公开(公告)日：2021-07-14

申请号：EP20151440.3

申请日：2020-01-13

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.