公开(公告)号：JP2001313280A

公开(公告)日：2001-11-09

申请号：JP2001096545

申请日：2001-03-29

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  BAUSUM TERESA HOPE ,  BERRY IVAN LOUIS III

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide an improved plasma ashing process for removing a photoresist and a postetched residue. SOLUTION: The method for removing the photoresist and the postetched residue comprises the steps of (a.) disposing a substrate having the photoresist and the postetched residue on the substrate, (b.) forming a reactive chemical species by adding a plasma gas composition containing a CHF3 as its one component, and (c.) exposing a surface of the substrate in a reaction chamber with its reactive chemical species.