公开(公告)号：JP2001313280A

公开(公告)日：2001-11-09

申请号：JP2001096545

申请日：2001-03-29

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  BAUSUM TERESA HOPE ,  BERRY IVAN LOUIS III

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide an improved plasma ashing process for removing a photoresist and a postetched residue. SOLUTION: The method for removing the photoresist and the postetched residue comprises the steps of (a.) disposing a substrate having the photoresist and the postetched residue on the substrate, (b.) forming a reactive chemical species by adding a plasma gas composition containing a CHF3 as its one component, and (c.) exposing a surface of the substrate in a reaction chamber with its reactive chemical species.

公开(公告)号：KR20080058288A

公开(公告)日：2008-06-25

申请号：KR20077000392

申请日：2007-01-06

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO

IPC: H01L21/3105 ,  H01L21/312

CPC classification number: H01L21/76825 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/324

Abstract: A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications comprises coating a suitable dielectric material onto a substrate; and exposing the dielectric material to ultraviolet radiation in an amount effective to reduce an organic content and/or increase a density and/or increase a wet etch resistance of the dielectric material. Optionally, the UV cured dielectric material may be exposed to multiple ultraviolet radiation patterns.

Abstract translation: 用于预金属和浅沟槽隔离应用中的电介质材料的UV固化方法包括将合适的介电材料涂覆到基底上; 以及以有效减少有机含量和/或增加密度和/或增加介电材料的耐湿蚀刻性的量将介电材料暴露于紫外线辐射。 任选地，UV固化的介电材料可以暴露于多种紫外线辐射图案。

公开(公告)号：DE60111926D1

公开(公告)日：2005-08-18

申请号：DE60111926

申请日：2001-03-20

Applicant: AXCELIS TECH INC

Inventor： BERRY LOUIS ,  CHUNG KYUHA ,  HAN QINGYUAN ,  LIU YOUFAN ,  MOYER SCOTT ,  SPAULDING JOHN ,  WALDFRIED CARLO ,  BRIDGEWATER TODD ,  CHEN WEI

IPC: C01B33/12 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  C04B41/50

公开(公告)号：SG187227A1

公开(公告)日：2013-02-28

申请号：SG2013006655

申请日：2011-07-27

Applicant: AXCELIS TECH INC

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

公开(公告)号：AU4590501A

公开(公告)日：2001-10-03

申请号：AU4590501

申请日：2001-03-20

Applicant: DOW CORNING ,  AXCELIS TECH INC

Inventor： BERRY IVAN LOUIS III ,  CHUNG KYUHA ,  HAN QINGYUAN ,  LIU YOUFAN ,  MOYER ERIC SCOTT ,  SPAULDING MICHAEL JOHN ,  WALDFRIED CARLO ,  BRIDGEWATER TODD ,  CHEN WEI

IPC: C01B33/12 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  C04B41/50

公开(公告)号：WO2006055346A3

公开(公告)日：2007-03-22

申请号：PCT/US2005040463

申请日：2005-11-08

Applicant: AXCELIS TECH INC ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BERRY IVAN

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BERRY IVAN

IPC: H01L21/316 ,  H01L21/3105

CPC classification number: H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

Abstract: Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

Abstract translation: 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：DE602004032225D1

公开(公告)日：2011-05-26

申请号：DE602004032225

申请日：2004-05-21

Applicant: AXCELIS TECH INC

Inventor： BECKNELL ALAN ,  BUCKLEY THOMAS ,  FERRIS DAVID ,  PINGREE RICHARD JR ,  SAKTHIVEL PALANIKUMARAN ,  SRIVASTAVA ASEEM ,  WALDFRIED CARLO

IPC: H01J37/32

公开(公告)号：DE60111926T2

公开(公告)日：2006-04-20

申请号：DE60111926

申请日：2001-03-20

Applicant: AXCELIS TECH INC

Inventor： BERRY LOUIS ,  CHUNG KYUHA ,  HAN QINGYUAN ,  LIU YOUFAN ,  MOYER SCOTT ,  SPAULDING JOHN ,  WALDFRIED CARLO ,  BRIDGEWATER TODD ,  CHEN WEI

IPC: C01B33/12 ,  C04B41/50 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

公开(公告)号：WO2012018374A3

公开(公告)日：2012-04-26

申请号：PCT/US2011001324

申请日：2011-07-27

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO

IPC: G03F7/42

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的等离子体介导的灰化过程通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含活性氮和活性氧 大于从包含氧气和氮气的气体混合物的等离子体可获得的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：WO2010059252A2

公开(公告)日：2010-05-27

申请号：PCT/US2009006270

申请日：2009-11-20

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

Abstract: Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的线（FEOL）等离子体介导灰化工艺的前端通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体的比例 活性氮和活性氧大于由包含氧气和氮气的气体混合物的等离子体得到的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。