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    PLASMA STRIPPING METHOD FOR REMOVING PHOTORESIST AND RESIDUES AFTER ETCHING
    2.
    发明专利
    PLASMA STRIPPING METHOD FOR REMOVING PHOTORESIST AND RESIDUES AFTER ETCHING 失效

    公开(公告)号：JP2001110775A

    公开(公告)日：2001-04-20

    申请号：JP2000234323

    申请日：2000-08-02

    Applicant: AXCELIS TECH INC

    Inventor： HAN QINGYUAN ,  DAHIMENE MAHMOUD ,  RUFFIN RICKY ,  PALANIKUMARAN SAKTHIVEL ,  BERRY IVAN LOUIS III

    IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma stripping method, having a high selective ratio and a high processing capacity and a dry ashing process. SOLUTION: This is a method of removing a photoresist 16 and/or residues after etching from an exposed low K dielectric layer 14 and makes a non-oxygen plasma, having electrically neutral particles and charged particles, by exposing a non-oxygen gas to an energy source. Thereafter, the charge particles are selectively removed from the plasma. The electrically neutral particles react with the photoresist 16 and/or the residues after etching to form a volatile gas to be removed from a wafer by a gas flow. The gas composition of the non-oxygen plasma comprises a gas containing hydrogen and a gas containing fluorine, wherein the gas containing fluorine is about 10% or less of the gas composition.

    PLASMA PROCESSING FOR POROUS SILICA THIN FILM
    6.
    发明申请
    PLASMA PROCESSING FOR POROUS SILICA THIN FILM 审中-公开
    多孔二氧化硅薄膜的等离子体处理

    公开(公告)号：WO0170628A3

    公开(公告)日：2002-04-18

    申请号：PCT/US0108997

    申请日：2001-03-20

    Applicant: DOW CORNING ,  AXCELIS TECH INC

    Inventor： BERRY IVAN LOUIS III ,  CHUNG KYUHA ,  HAN QINGYUAN ,  LIU YOUFAN ,  MOYER ERIC SCOTT ,  SPAULDING MICHAEL JOHN ,  WALDFRIED CARLO ,  BRIDGEWATER TODD ,  CHEN WEI

    IPC: C01B33/12 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  C04B41/50

    CPC classification number: H01L21/3122 ,  C01B33/126 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31695 ,  Y10T428/31663

    Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si-H groups. The coating can be thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5. Plasma treatment of the thermally cured coating will convert the coating into porous silica. Plasma treatment of the thermally cured porous network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and about 120 seconds at a temperature less than about 350 DEG C. Porous network coatings can also be plasma cured without prior thermal curing. The coating can be plasma cured at a temperature between about 200 DEG C and about 250 DEG C for less than about 5 minutes. The thermally cured plasma treated coating or plasma cured coating can optionally be annealed. Annealing by rapid thermal processing (RTP) of the thermally cured plasma treated or plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus. The annealing temperature is preferably less than about 475 DEG C, and the annealing time is preferably no more than about 180 seconds. The annealed, thermally cured plasma treated or plasma cured coating has a dielectric constant in the range of from about 1.1 to about 3.5 and an improved elastic modulus.

    Abstract translation: 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂制备的多孔网状涂层。 涂层可以热固化，并且介电常数在约1.1至约3.5的范围内。 热固化涂层的等离子体处理将将涂层转化为多孔二氧化硅。 热固化多孔网络涂层的等离子体处理产生具有改进模量但具有较高介电常数的涂层。 该涂层在小于约350℃的温度下进行等离子体处理约15至约120秒。多孔网络涂层也可以在没有预先热固化的情况下进行等离子体固化。 涂层可以在约200℃至约250℃的温度下等离子体固化少于约5分钟。 热固化的等离子体处理的涂层或等离子体固化涂层可以任选地退火。 经热固化的等离子体处理或等离子体固化涂层的快速热处理（RTP）退火降低了涂层的介电常数，同时保持了改进的弹性模量。 退火温度优选小于约475℃，退火时间优选不大于约180秒。 经退火的热固化等离子体处理或等离子体固化涂层的介电常数在约1.1至约3.5的范围内并具有改进的弹性模量。

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