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    PROCESSES FOR MONITORING THE LEVELS OF OXYGEN AND/OR NITROGEN SPECIES IN A SUBSTANTIALLY OXYGEN AND NITROGEN-FREE PLASMA ASHING PROCESS
    4.
    发明申请
    PROCESSES FOR MONITORING THE LEVELS OF OXYGEN AND/OR NITROGEN SPECIES IN A SUBSTANTIALLY OXYGEN AND NITROGEN-FREE PLASMA ASHING PROCESS 审中-公开
    用于监测氧化和/或氮物质在大量氧气和无氮等离子体吸附过程中的含量的方法

    公开(公告)号：WO2007111823A2

    公开(公告)日：2007-10-04

    申请号：PCT/US2007006071

    申请日：2007-03-09

    Applicant: AXCELIS TECH INC ,  SAKTHIVEL PALANIKUMARAN ,  BUCKLEY THOMAS ,  BECKNELL ALAN

    Inventor： SAKTHIVEL PALANIKUMARAN ,  BUCKLEY THOMAS ,  BECKNELL ALAN

    CPC classification number: G03F7/427 ,  G01N21/73 ,  H01J37/32972 ,  H01L21/31138

    Abstract: Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and correlated to amounts of oxygen and nitrogen present in the plasma. This so-called "effect detection" process monitors perturbations in the spectra specifically associated with species other than nitrogen and/or oxygen due to the presence of trace amounts of oxygen and/or nitrogen species and is used to quantitatively determine the amount of oxygen and/or nitrogen at a sensitivity on the order of 1 part per million and potentially 1part per billion.

    Abstract translation: 在基本上无氧和无氮等离子体灰化过程中监测氧和/或氮的水平的方法通常包括使用光发射监测等离子体。 监测由等离子体中通常富含的其它物质上存在的低水平的氧和/或氮物质产生的影响并与血浆中存在的氧和氮的量相关联。 这种所谓的“效应检测”过程监测由于存在微量氧和/或氮物质而与氮和/或氧以外的物质特异性相关的光谱的扰动，并用于定量测定氧的量和 /或氮的灵敏度为百万分之一，潜在地为十亿分之一。

    PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE AND PLASMA APPARATUS WUTH COOLING MEANS
    5.
    发明申请
    PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE AND PLASMA APPARATUS WUTH COOLING MEANS 审中-公开
    用于增加光催化剂去除速率和等离子体装置的等离子体喷雾方法

    公开(公告)号：WO2006026765A3

    公开(公告)日：2006-06-29

    申请号：PCT/US2005031492

    申请日：2005-09-01

    Applicant: AXCELIS TECH INC ,  FERRIS DAVID ,  HAMMAR PHILIP ,  BECKNELL ALAN

    Inventor： FERRIS DAVID ,  HAMMAR PHILIP ,  BECKNELL ALAN

    IPC: H01L21/027 ,  G03F7/42 ,  H01J37/32

    CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32522 ,  H01J2237/3342 ,  H01L21/0206 ,  H01L21/76814

    Abstract: A plasma ashing process for removing photoresist material and post etch residues from a substrate, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

    Abstract translation: 一种用于去除光致抗蚀剂材料和从基底后蚀刻残留物的等离子体灰化方法，该方法包括由基本上无氧和无氮的气体混合物形成等离子体; 将等离子体引入处理室，其中处理室包括与等离子体流体连通的挡板组件; 使等离子体流过挡板组件并从衬底去除光致抗蚀剂材料，后蚀刻残余物和挥发性副产物; 通过将氧等离子体引入到处理室中来周期性地清洁处理室; 以及通过使冷却气体流过挡板组件来冷却挡板组件。 处理室，其适于接收下游等离子体，所述处理室包括上挡板，所述上挡板包括与所述处理室的壁热连通的至少一个导热支座; 以及与上挡板间隔开的下挡板。

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