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    PLASMA SOURCE HAVING SUPPLEMENTAL ENERGIZER FOR ION ENHANCEMENT
    2.
    发明申请
    PLASMA SOURCE HAVING SUPPLEMENTAL ENERGIZER FOR ION ENHANCEMENT 审中-公开
    具有补充能源的等离子体源用于离子增强

    公开(公告)号：WO02082491A3

    公开(公告)日：2002-12-05

    申请号：PCT/US0210335

    申请日：2002-04-04

    Applicant: AXCELIS TECH INC

    Inventor： SRIVASTAVA ASEEM ,  RICHARDSON DANIEL

    IPC: H01J37/32

    CPC classification number: H01J37/32192 ,  H01J37/321

    Abstract: A supplemental ion source (74) for a plasma processing system (10) having a plasma processing chamber (16) is provided. The ion source (74) comprises: a signal generator (82, 96) for generating an output signal; and an antenna assembly (76, 90) located proximate the process chamber (16), whereby energization of the antenna assembly by the signal generator ionizes plasma confined within the processing chamber (16) to create plasma having a substantial ionized content. The antenna assembly (76, 90) is generally planar in shape and may take the form of a plate or coil antenna. The signal generator preferably generates an output signal in the radio frequency (RF) range. The supplemental energizer operates independently of the first plasma source such that either, or both, may be switched on or off at any time.

    Abstract translation: 提供了一种用于具有等离子体处理室（16）的等离子体处理系统（10）的补充离子源（74）。 离子源（74）包括：用于产生输出信号的信号发生器（82,96）; 以及位于处理室（16）附近的天线组件（76,90），由此由信号发生器对天线组件的通电电离了处理室（16）内限制的等离子体，以产生具有基本电离含量的等离子体。 天线组件（76,90）的形状大体上是平面的并且可以采取板或线圈天线的形式。 信号发生器优选地在射频（RF）范围内产生输出信号。 辅助增能器独立于第一等离子体源操作，使得任一个或两者可以在任何时间被打开或关闭。

    3.
    发明专利
    未知

    公开(公告)号：DE602005019535D1

    公开(公告)日：2010-04-08

    申请号：DE602005019535

    申请日：2005-01-12

    Applicant: AXCELIS TECH INC

    Inventor： SRIVASTAVA ASEEM

    IPC: H01J37/32 ,  H01L21/00

    Abstract: A baffle plate assembly for distributing gas flows into an adjacent process chamber containing a semiconductor wafer to be processed includes a planar gas distribution portion having a plurality of apertures therein; a flange surrounding the gas distribution portion; and an impingement device centrally attached to the gas distribution portion, wherein the device includes a cap and a stem, the stem being in thermal contact with the gas distribution portion. Also disclosed herein are plasma reactors employing the baffle plate assembly and methods for reducing recombination of species in a plasma.

    Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing
    4.
    发明专利
    Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing 未知

    公开(公告)号：AU2002313697A1

    公开(公告)日：2003-01-29

    申请号：AU2002313697

    申请日：2002-07-12

    Applicant: AXCELIS TECH INC

    Inventor： SAKTHIVEL PALANI ,  SRIVASTAVA ASEEM ,  SAWIN HERBERT

    IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

    Abstract: A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.

    6.
    发明专利
    未知

    公开(公告)号：DE602004016147D1

    公开(公告)日：2008-10-09

    申请号：DE602004016147

    申请日：2004-05-21

    Applicant: AXCELIS TECH INC

    Inventor： SRIVASTAVA ASEEM ,  SAKTHIVEL PALANIKUMARAN ,  BUCKLEY THOMAS

    IPC: H01J37/32 ,  G03F7/42 ,  H01L21/00

    Abstract: A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.

    9.
    发明专利
    未知

    公开(公告)号：DE60235813D1

    公开(公告)日：2010-05-12

    申请号：DE60235813

    申请日：2002-07-12

    Applicant: AXCELIS TECH INC

    Inventor： SRIVASTAVA ASEEM ,  SAKTHIVEL PALANI ,  SAWIN HERBERT

    IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  H01L21/311

    Abstract: A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.

    CONTACT TEMPERATURE PROBE AND PROCESS
    10.
    发明专利
    CONTACT TEMPERATURE PROBE AND PROCESS 未知

    公开(公告)号：AU2003226160A1

    公开(公告)日：2003-10-13

    申请号：AU2003226160

    申请日：2003-03-31

    Applicant: AXCELIS TECH INC

    Inventor： COLSON MICHAEL ,  SRIVASTAVA ASEEM

    IPC: G01K1/12 ,  G01K1/14 ,  G01K1/18

    Abstract: A contact measurement probe for measuring a temperature of a substrate in a process environment includes a probe head having a contact surface made of a ceramic material or a polymeric material for contacting the substrate. The contact measurement probe eliminates electrical biasing effects in process environments that include an ion source, thereby providing greater accuracy and reproducibility in temperature measurement.

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