公开(公告)号：JP2001203195A

公开(公告)日：2001-07-27

申请号：JP2000339066

申请日：2000-11-07

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W ,  CARDOSO ANDRE G

IPC: H05H1/00 ,  F24D9/00 ,  G03F7/42 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma process device, a temperature control device, and its control method used in ashing for removing a photoresist or residue. SOLUTION: A temperature control device for a plasma process device 10 which comprises plasma generator 14 and a process chamber 16 communicating with it comprises a radiation heating assembly 20 provided with a radiation heating element 58 provided in each zone, and a condensing reflector 56 for converging a radiation energy from the radiation heating element toward a substrate, a feedback mechanism 24 which provides a temperature feedback signal for the substrate, and a controller 22 wherein a temperature set point signal 27 and a temperature feedback signal 25 are received and the output applied to a zone comprising the radiation heating element is independently controlled. The controller comprises a PID closed loop controller and a lamp output controller.

公开(公告)号：JP2001210629A

公开(公告)日：2001-08-03

申请号：JP2000358026

申请日：2000-11-24

Applicant: AXCELIS TECH INC

Inventor： JANOS ALAN CHARLES ,  CARDOSO ANDRE G ,  RICHARDSON DANIEL BRIAN

IPC: G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a wafer treatment system which is monitored selectively and a monitoring method for the wafer treatment processes. SOLUTION: A wafer treatment system includes a wafer treatment chamber 22 which includes support bodies which arrange the wafer in an internal region of the treatment chamber 22, a wafer treatment mechanism including a means in which the plasma is transferred into the treatment chamber 22 to eliminate a membrane from as exposed surface 136 of the wafer, and a light-receiving device 140 which is equipped in the treatment chamber 22 to monitor densities of the plasma which is focused near the wafer surface and a reaction product of the membrane. To optimize an optical detecting device 110 for ashing terminal point detecting using a spectrometer, the point of completion terminal is recognized by monitoring the densities of the plasma on the wafer surface and the product of the membrane, by correcting the light from the region, having the strongest light.

公开(公告)号：JP2001189305A

公开(公告)日：2001-07-10

申请号：JP2000337593

申请日：2000-11-06

Applicant: AXCELIS TECH INC

Inventor： HAN QUIGYAN ,  SAKTHIVEL PALANI ,  RUFFIN RICKY R ,  CARDOSO ANDRE G

IPC: H01L21/302 ,  G01N21/68 ,  G03F7/42 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a perfect method by which the ending point of ashing for non oxygen plasma peeling treatment can be detected accurately. SOLUTION: In this method of deicing the ending point of non-oxygen plasma peeling treatment, used at the working of a semiconductor wafer, and non- oxygen plasma is generated by exciting a gas composition, containing a nitrogen gas and a reactive gas and is made to react to a substrate 88 carrying a photoresist/residues. The ending point is decided by optically measuring the first opically discharged signal of the resulted product of an oxygen-free resection at a wavelength of about 387 nm. When the plasma does not react to the substrate 88 any longer, the generating time of the optically discharged signal with the wavelength of about 387 nm is decided as the ending point and is displayed that the photoresist/residues are removed from the wafer. It is also possible to decide the ending point by monitoring the second optically discharged signal of the resulted product of the oxygen-free reaction at wavelengths of about 358 nm and 431 nm.