公开(公告)号：JP2002033311A

公开(公告)日：2002-01-31

申请号：JP2001125854

申请日：2001-04-24

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W ,  RICHARDSON DANIEL BRIAN

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a gas dispersing plate which lower the gas temperature of a gas used in a wafer treatment apparatus, while not damaging a wafer during ashing treatment. SOLUTION: This plasma treatment apparatus 10 has a plasma generator 14 and an inner chamber 17, communicating with the plasma generator 14 so as to be made to react with a wafer 18 surface. This apparatus also includes a wall 53 for forming the inner chamber at least partially and further has a treatment chamber 16 provided with a first cooling passage to this wall, an inlet and an outlet for a cooling medium and a radiative heating assembly 20 for heating the wafer 18. Further, the apparatus also includes a gas dispersing plate, that is, a baffle plate, which is equipped with a cooling passage for lowering the operation temperature during wafer treatment. The wall of the treatment chamber and the cooling passage of the baffle plate constitute a cooling circulation system, while communicating with each other.

公开(公告)号：JP2001210629A

公开(公告)日：2001-08-03

申请号：JP2000358026

申请日：2000-11-24

Applicant: AXCELIS TECH INC

Inventor： JANOS ALAN CHARLES ,  CARDOSO ANDRE G ,  RICHARDSON DANIEL BRIAN

IPC: G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a wafer treatment system which is monitored selectively and a monitoring method for the wafer treatment processes. SOLUTION: A wafer treatment system includes a wafer treatment chamber 22 which includes support bodies which arrange the wafer in an internal region of the treatment chamber 22, a wafer treatment mechanism including a means in which the plasma is transferred into the treatment chamber 22 to eliminate a membrane from as exposed surface 136 of the wafer, and a light-receiving device 140 which is equipped in the treatment chamber 22 to monitor densities of the plasma which is focused near the wafer surface and a reaction product of the membrane. To optimize an optical detecting device 110 for ashing terminal point detecting using a spectrometer, the point of completion terminal is recognized by monitoring the densities of the plasma on the wafer surface and the product of the membrane, by correcting the light from the region, having the strongest light.

公开(公告)号：DE60143717D1

公开(公告)日：2011-02-03

申请号：DE60143717

申请日：2001-04-25

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID WILLIAM ,  RICHARDSON DANIEL BRIAN

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

公开(公告)号：DE60131695T2

公开(公告)日：2008-11-13

申请号：DE60131695

申请日：2001-04-25

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID WILLIAM ,  RICHARDSON DANIEL BRIAN

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing system (10) is provided, having processor chamber walls (53) and/or a gas distribution or baffle plate (54) equipped with integral cooling passages (80, 156) for reducing an operating temperature thereof during processing of a wafer (18) by the system. Cooling medium inlets (158, 82) and outlets (160, 86) are connected to the cooling passages to permit circulation of a cooling medium through the cooling passages. Preferably, the chamberwalls (53) and the gas distribution or baffle plate (54) are comprised of low-alloy anodized aluminum and the cooling passages are machined directly therein. The cooling medium may be either liquid (e.g., water) or gas (e.g., helium or nitrogen). The baffle plate (54) comprises a generally planar, apertured, gas distribution central portion (74) surrounded by a flange (78), into both of which the cooling passages may extend. The cooling passages in the chamber walls (53) and those in the gas distribution or baffle plate (54) may be in communication with one another so as to permit them to share a single coolant circulating system. Alternatively, the cooling passages in the chamber walls (53) and those in the gas distribution or baffle plate (54) may not be in communication with one another, so as to provide independent circulating systems (gas or liquid) for each, thereby enabling independent temperature control and individual flow control thereof. In operation, the cooling medium in the chamber wall cooling passages (156) is maintained approximately within the range of 15° C - 30° C, and the cooling medium in the gas distribution or baffle plate cooling passages (80) is maintained approximately within the range of 15° C - 80° C. Periodically, the lower baffle plate may alternatively be operated at up to 250° C to remove process residues from the surface of the plate that may otherwise condense and remain on the surface at lower operating temperatures (e.g., 15° C - 80° C).

公开(公告)号：DE60131695D1

公开(公告)日：2008-01-17

申请号：DE60131695

申请日：2001-04-25

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID WILLIAM ,  RICHARDSON DANIEL BRIAN

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing system (10) is provided, having processor chamber walls (53) and/or a gas distribution or baffle plate (54) equipped with integral cooling passages (80, 156) for reducing an operating temperature thereof during processing of a wafer (18) by the system. Cooling medium inlets (158, 82) and outlets (160, 86) are connected to the cooling passages to permit circulation of a cooling medium through the cooling passages. Preferably, the chamberwalls (53) and the gas distribution or baffle plate (54) are comprised of low-alloy anodized aluminum and the cooling passages are machined directly therein. The cooling medium may be either liquid (e.g., water) or gas (e.g., helium or nitrogen). The baffle plate (54) comprises a generally planar, apertured, gas distribution central portion (74) surrounded by a flange (78), into both of which the cooling passages may extend. The cooling passages in the chamber walls (53) and those in the gas distribution or baffle plate (54) may be in communication with one another so as to permit them to share a single coolant circulating system. Alternatively, the cooling passages in the chamber walls (53) and those in the gas distribution or baffle plate (54) may not be in communication with one another, so as to provide independent circulating systems (gas or liquid) for each, thereby enabling independent temperature control and individual flow control thereof. In operation, the cooling medium in the chamber wall cooling passages (156) is maintained approximately within the range of 15° C - 30° C, and the cooling medium in the gas distribution or baffle plate cooling passages (80) is maintained approximately within the range of 15° C - 80° C. Periodically, the lower baffle plate may alternatively be operated at up to 250° C to remove process residues from the surface of the plate that may otherwise condense and remain on the surface at lower operating temperatures (e.g., 15° C - 80° C).