公开(公告)号：JP2002033311A

公开(公告)日：2002-01-31

申请号：JP2001125854

申请日：2001-04-24

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W ,  RICHARDSON DANIEL BRIAN

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a gas dispersing plate which lower the gas temperature of a gas used in a wafer treatment apparatus, while not damaging a wafer during ashing treatment. SOLUTION: This plasma treatment apparatus 10 has a plasma generator 14 and an inner chamber 17, communicating with the plasma generator 14 so as to be made to react with a wafer 18 surface. This apparatus also includes a wall 53 for forming the inner chamber at least partially and further has a treatment chamber 16 provided with a first cooling passage to this wall, an inlet and an outlet for a cooling medium and a radiative heating assembly 20 for heating the wafer 18. Further, the apparatus also includes a gas dispersing plate, that is, a baffle plate, which is equipped with a cooling passage for lowering the operation temperature during wafer treatment. The wall of the treatment chamber and the cooling passage of the baffle plate constitute a cooling circulation system, while communicating with each other.

公开(公告)号：JP2001203195A

公开(公告)日：2001-07-27

申请号：JP2000339066

申请日：2000-11-07

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W ,  CARDOSO ANDRE G

IPC: H05H1/00 ,  F24D9/00 ,  G03F7/42 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma process device, a temperature control device, and its control method used in ashing for removing a photoresist or residue. SOLUTION: A temperature control device for a plasma process device 10 which comprises plasma generator 14 and a process chamber 16 communicating with it comprises a radiation heating assembly 20 provided with a radiation heating element 58 provided in each zone, and a condensing reflector 56 for converging a radiation energy from the radiation heating element toward a substrate, a feedback mechanism 24 which provides a temperature feedback signal for the substrate, and a controller 22 wherein a temperature set point signal 27 and a temperature feedback signal 25 are received and the output applied to a zone comprising the radiation heating element is independently controlled. The controller comprises a PID closed loop controller and a lamp output controller.

公开(公告)号：JP2002057146A

公开(公告)日：2002-02-22

申请号：JP2001128061

申请日：2001-04-25

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W

IPC: H05H1/46 ,  B01J19/08 ,  C23C16/44 ,  C23C16/455 ,  C25D11/04 ,  G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing chamber and a baffle plate assembly for forming a laminar flow of activated gas which crosses a surface of a processing substrate in a plasma processing device. SOLUTION: A plasma processing chamber 10 comprises an inner chamber 20 for wafer processing formed of a pall 38 with a top wall 17, a lower baffle plate 16 which is disposed adjacent to the inner chamber 20 for dispersing activated gas and is almost flat and a baffle plate assembly 12 including an upper baffle plate 14 which is fixed and disposed above the plate 16 and is almost flat. A plenum is formed between the top wall 17 and the lower baffle plate 16. The plenum works under a higher pressure than the inner chamber 20 during operation of the plasma processing chamber 10 and the lower baffle plate 16 has a pattern of an opening 30 formed to enable gas to be supplied into an inner chamber through a plenum.