公开(公告)号：JP2001110775A

公开(公告)日：2001-04-20

申请号：JP2000234323

申请日：2000-08-02

Applicant: AXCELIS TECH INC

Inventor： HAN QINGYUAN ,  DAHIMENE MAHMOUD ,  RUFFIN RICKY ,  PALANIKUMARAN SAKTHIVEL ,  BERRY IVAN LOUIS III

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a plasma stripping method, having a high selective ratio and a high processing capacity and a dry ashing process. SOLUTION: This is a method of removing a photoresist 16 and/or residues after etching from an exposed low K dielectric layer 14 and makes a non-oxygen plasma, having electrically neutral particles and charged particles, by exposing a non-oxygen gas to an energy source. Thereafter, the charge particles are selectively removed from the plasma. The electrically neutral particles react with the photoresist 16 and/or the residues after etching to form a volatile gas to be removed from a wafer by a gas flow. The gas composition of the non-oxygen plasma comprises a gas containing hydrogen and a gas containing fluorine, wherein the gas containing fluorine is about 10% or less of the gas composition.

公开(公告)号：DE60040252D1

公开(公告)日：2008-10-30

申请号：DE60040252

申请日：2000-02-17

Applicant: AXCELIS TECH INC

Inventor： BERRY IVAN LOUIS III ,  ROUNDS STUART NATHAN ,  OWENS MICHAEL SHAWN ,  HALLOCK JOHN SCOTT ,  DAHIMENE MAHMOUD

IPC: H01L21/302 ,  H01L21/311 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213