公开(公告)号：WO2003049182A2

公开(公告)日：2003-06-12

申请号：PCT/US2002/038310

申请日：2002-12-02

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JANOS, Alan ,  BERRY, Ivan ,  SINNOTT, Anthony ,  STEWART, Kevin

IPC: H01L21/8247

CPC classification number: H01L29/66825 ,  H01L21/268 ,  H01L21/28176

Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Abstract translation: 用于光学降低集成电路中的电荷积聚的方法包括将集成电路或其部分暴露于宽带辐射源。 该过程有效地减少了在集成电路的制造中发生的电荷积累。

公开(公告)号：WO2006031650A3

公开(公告)日：2006-03-23

申请号：PCT/US2005/032179

申请日：2005-09-08

Applicant: AXCELIS TECHNOLOGIES, INC. ,  JANOS, Alan ,  PACK, Malcolm ,  KAMAREHI, Mohammad ,  COLSON, Michael

Inventor： JANOS, Alan ,  PACK, Malcolm ,  KAMAREHI, Mohammad ,  COLSON, Michael

IPC: H01J61/30 ,  H01J65/04 ,  C03C4/00 ,  C03C3/06

Abstract: An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.

公开(公告)号：WO2003007341A2

公开(公告)日：2003-01-23

申请号：PCT/US2002/023235

申请日：2002-07-12

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JANOS, Alan ,  RICHARDSON, Daniel

IPC: H01L

CPC classification number: G03F7/70025 ,  G03F7/70575 ,  H01L21/67115 ,  H01L21/67126

Abstract: A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation. The range of wavelengths transmitted to the wafer treatment region can be Atuned≅ by using a filter disposed adjacent to the protective window which functions to block transmission of selected wavelengths of emitted radiation.

Abstract translation: 根据本发明构造的辐射源特别适用于处理半导体晶片。 本发明的示例性实施例包括具有限定辐射发射区域的一侧的二维表面的基极。 可辐射的准分子气体存在于辐射发射区域中。 受激准分子气体在通电时会以UV和/或VUV波长发射辐射。 二维电介质辐射透射层限定辐射发射区的相对侧，并将辐射传输到晶片处理区。 设置在电介质辐射透射层和保护性辐射透射窗之间的是二维矩阵或屏幕电极，其限定大致平行于基极区域的二维表面的平面。 耦合到基极和矩阵电极的电源，以激励电极和致密气体，引起UV和/或VUV辐射的发射。 传输到晶片处理区域的波长范围可以通过使用与保护窗相邻设置的滤波器来抑制，该滤波器用于阻止所选择的发射辐射波长的传输。

公开(公告)号：WO2003007327A2

公开(公告)日：2003-01-23

申请号：PCT/US2002/023234

申请日：2002-07-12

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： CARDOSO, Andre ,  JANOS, Alan

IPC: H01J37/00

CPC classification number: H01J37/32935 ,  H01J37/32963

Abstract: A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing.

Abstract translation: 用于在等离子体介导的蚀刻过程期间确定实时蚀刻速率的过程和设备。 实时蚀刻速率确定包括监测由直接光束和来自晶片表面的反射光束产生的干涉图案。 用于记录干涉图案的视角几乎平行于晶圆平面并且在要移除的层上的固定焦点处。 直接光束和反射光束是在等离子体处理过程中原位产生的。

公开(公告)号：WO2004059270A1

公开(公告)日：2004-07-15

申请号：PCT/US2003/039946

申请日：2003-12-16

Applicant: AXCELIS TECHNOLOGIES INC.

Inventor： JANOS, Alan ,  ZHANG, Betty

IPC: G01J3/51

CPC classification number: G01J1/429 ,  G11C16/18

Abstract: An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer (120) adapted for collecting light; a waveguide (130) having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe (150) in optical communication with the other end of the waveguide; and a filter (140) intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

Abstract translation: 用于测量光强度的装置和方法包括使用探针。 该探针配置用于监测约180纳米至约270纳米（nm）的波长范围。 探针包括适于收集光的反射和漫射层（120）; 波导（130），其一端与所述反射和扩散层光学连通，其中所述波导在约180nm至约270nm的波长处具有大于约50％的透射率; 传感器探针（150），其与所述波导的另一端光学连通; 以及在波导和传感器之间的过滤器（140），其中所述过滤器适于去除大于约270nm的波长并且具有大于约50％的约180nm至约270nm的波长的百分比透射率。

公开(公告)号：WO2004001790A1

公开(公告)日：2003-12-31

申请号：PCT/US2003/019396

申请日：2003-06-19

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BERRY, Ivan ,  JANOS, Alan ,  COLSON, Michael

IPC: H01J37/32

CPC classification number: H01J37/32009

Abstract: A dielectric barrier discharge apparatus for treating a substrate includes a first planar electrode; a dielectric layer disposed on a surface of the first planar electrode; a porous planar electrode spaced above and in a parallel plane with the dielectric layer, wherein the porous planar electrode has a geometric transmission factor greater than 70 percent; and a power supply in electrical communication with the first electrode and the second electrode. A process for treating a substrate includes exposing the substrate surface to reactants produced by the dielectric barrier discharge apparatus.

Abstract translation: 用于处理衬底的电介质阻挡层放电装置包括：第一平面电极; 设置在所述第一平面电极的表面上的电介质层; 多孔平面电极与电介质层隔开并平行于其间，其中多孔平面电极具有大于70％的几何透过系数; 以及与第一电极和第二电极电连通的电源。 用于处理基板的方法包括将基板表面暴露于由电介质阻挡放电装置产生的反应物。

公开(公告)号：WO2003007341A3

公开(公告)日：2003-01-23

申请号：PCT/US2002/023235

申请日：2002-07-12

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JANOS, Alan ,  RICHARDSON, Daniel

IPC: H01J65/04

Abstract: A radiation source (10) constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode (30) having a two dimensional surface bounding one side of a radiation emitting region (35). An ionizable, excimer gas (35a) is present in the radiation emitting region. The excimer gas (35a), when energized, emits radiation in the UV region. A two dimensional dielectric radiation transmissive layer (34) bounds an opposite side of the radiation emitting region (35) and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer (34) and a protective radiation transmissive window (36) is a two dimensional matrix or screen electrode (32) defining a plane generally parallel to the two dimensional surface of the base electrode (30) region. A power supply (33) coupled to the base and matrix electrodes (30, 32) to energize the electrodes (30, 32) and the eximer gas (35a) causing emission of UV radiation. The range of wavelengths transmitted to the wafer treatment region can be tuned by using a filter (190) disposed adjacent to the protective window (36) which functions to block transmission of selected wavelengths of emitted radiation.

公开(公告)号：EP1789991A2

公开(公告)日：2007-05-30

申请号：EP05796590.7

申请日：2005-09-08

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： JANOS, Alan ,  PACK, Malcolm ,  KAMAREHI, Mohammad ,  COLSON, Michael

IPC: H01J61/30 ,  H01J65/04 ,  C03C4/00 ,  C03C3/06

CPC classification number: H01J65/044 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/11 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/42 ,  H01J61/302

Abstract: An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.

公开(公告)号：EP1573286A1

公开(公告)日：2005-09-14

申请号：EP03797024.1

申请日：2003-12-16

Applicant: Axcelis Technologies, Inc.

Inventor： JANOS, Alan ,  ZHANG, Betty

IPC: G01J3/51 ,  G01J1/04 ,  G01J1/42 ,  G11C16/18 ,  H01L21/336

CPC classification number: G01J1/429 ,  G11C16/18

Abstract: An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer (120) adapted for collecting light; a waveguide (130) having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe (150) in optical communication with the other end of the waveguide; and a filter (140) intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

公开(公告)号：EP1407475A2

公开(公告)日：2004-04-14

申请号：EP02756575.3

申请日：2002-07-12

Applicant: Axcelis Technologies Inc.

Inventor： JANOS, Alan ,  RICHARDSON, Daniel

IPC: H01J65/04 ,  G03F7/20 ,  H01J61/12

CPC classification number: G03F7/70025 ,  G03F7/70575 ,  H01L21/67115 ,  H01L21/67126

Abstract: A radiation source (10) constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode (30) having a two dimensional surface bounding one side of a radiation emitting region (35). An ionizable, excimer gas (35a) is present in the radiation emitting region. The excimer gas (35a), when energized, emits radiation in the UV region. A two dimensional dielectric radiation transmissive layer (34) bounds an opposite side of the radiation emitting region (35) and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer (34) and a protective radiation transmissive window (36) is a two dimensional matrix or screen electrode (32) defining a plane generally parallel to the two dimensional surface of the base electrode (30) region. A power supply (33) coupled to the base and matrix electrodes (30, 32) to energize the electrodes (30, 32) and the eximer gas (35a) causing emission of UV radiation. The range of wavelengths transmitted to the wafer treatment region can be tuned by using a filter (190) disposed adjacent to the protective window (36) which functions to block transmission of selected wavelengths of emitted radiation.