Abstract:
An ion implantation system and method is provided for forming an ion beam from aluminum iodide. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.
Abstract:
An ion implantation system (101) is provided having an ion source (108) configured to form an ion beam (116) from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station (106) configured to accept the ion beam for implantation of aluminum ions into a workpiece (128). The ion source may have a solid-state material source (112) having aluminum iodide in a solid form. A solid source vaporizer (146) may vaporize the aluminum iodide, defining gaseous aluminum iodide. An arc chamber (114) may form a plasma from the gaseous aluminum iodide, where arc current from a power supply (110) is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes (118) may extract the ion beam from the arc chamber. Optionally, a water vapor source (150) further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.