Abstract:
An ion implantation system (101) has a chlorine based source material (113), such as aluminum trichloride, germanium (iv) chloride, indium (i) chloride, indium (iii) chloride, gallium (ii) chloride, and gallium (iii) chloride. An ion source (108) is configured to ionize the chlorine based source material and form an ion beam (112). The ionization of the chlorine based source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus (145) is configured to introduce a reducing agent including hydrogen to the ion source, such as hydrogen gas or phosphine. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly (104) is configured to selectively transport the ion beam, and an end station (106) is configured to accept the ion beam for implantation of ions into a workpiece (118).
Abstract:
An ion implantation system (101) is provided having an ion source (108) configured to form an ion beam (116) from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station (106) configured to accept the ion beam for implantation of aluminum ions into a workpiece (128). The ion source may have a solid-state material source (112) having aluminum iodide in a solid form. A solid source vaporizer (146) may vaporize the aluminum iodide, defining gaseous aluminum iodide. An arc chamber (114) may form a plasma from the gaseous aluminum iodide, where arc current from a power supply (110) is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes (118) may extract the ion beam from the arc chamber. Optionally, a water vapor source (150) further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.