公开(公告)号：DE19534494A1

公开(公告)日：1997-03-20

申请号：DE19534494

申请日：1995-09-18

Applicant: BASF AG

Inventor： PAULUS WOLFGANG DR ,  BINDER HORST ,  ETZBACH KARL-HEINZ DR ,  SCHUHMACHER PETER DR ,  SIEMENSMEYER KARL DR ,  BLEYL INGO ,  HAARER DIETRICH PROF DR ,  MEYER HARALD DR ,  SIMMERER JUERGEN

IPC: C09K11/06 ,  C09K19/12 ,  C09K19/32 ,  C09K19/34 ,  C09K19/60 ,  H01L31/101 ,  H01L33/08 ,  H01L51/00 ,  H01L51/30 ,  H01L29/76 ,  H01L33/00

Abstract: Transistor has parallel planar source and drain electrodes (1, 2) which are 0.01-100 mu m apart, gate electrode(s) (3) which have the same dimensions as the source and drain electrodes and are placed parallel to and between them, and a layer (4) of discotic columnar liquid crystalline material (I) between the source and drain electrodes with the columnar axis oriented perpendicular to the surface of these electrodes. Also claimed is electronic or electro-optical equipment contg. this transistor.