Abstract:
The invention relates to a device and process for producing moulding compounds and coatings on substrates by curing radiation-curable compounds in an inert gas atmosphere by irradiating them with energy-rich radiation.
Abstract:
The invention relates to an apparatus and a method of producing molding materials and coatings on substrates by curing radiation-curable materials under an inert gas atmosphere by exposure to high-energy radiation.
Abstract:
The invention relates to a process for preparing isocyanates by reacting amines with phosgene in the gas phase in a reaction zone, with the reaction mixture being passed through a zone into which a liquid is sprayed to stop the reaction, wherein the reaction mixture is passed through a zone having a reduced flow cross section between the reaction zone and the zone into which the liquid is sprayed.
Abstract:
The invention relates to a process for preparing isocyanates by reacting amines with phosgene in the gas phase in a reaction zone, with the reaction mixture being passed through a zone into which a liquid is sprayed to stop the reaction, wherein the reaction mixture is passed through a zone having a reduced flow cross section between the reaction zone and the zone into which the liquid is sprayed.
Abstract:
The invention relates to a reactor (R) for performing a three-phase react ion of a fluid phase (1) and a gaseous phase (2) on a packed bed catalyst (F ), the packed bed catalyst (F) being disposed horizontally in the reactor (R ) and the fluid phase (1) and the gaseous phase (2) being fed through the re actor (R) from the bottom to the top, using a mixing and distributing device (MV) across the packed bed catalyst (F), characterized in that the mixing a nd distributing device (MV) comprises a trough distributor (TV) for the flui d phase (1) having trough-shaped channels (K) and drain tubes (A) in the tro ugh-shaped channels (K) for the fluid phase (1), and a distributor floor (B) disposed below and at a distance from the trough distributor (TV) in which vertical spouts (T) are disposed, having one or more openings (P1) for the i nlet of the gaseous phase (2) and one or more openings (P2) disposed below t he openings (P1) for the inlet of the gaseous phase, for the inlet of the fl uid phase (1) into the spouts (T), and the number and size of the openings ( P2) for the inlet of the fluid phase (1) being designed such that the fluid level on the distribution floor (B) is adjusted to be below the openings (P1 ) for the inlet of the gaseous phase (2) and above the openings (P2) for the inlet of the fluid phase (1) for a prescribedinlet flow of fluid.