Deposition of copper on substrate
    1.
    发明专利
    Deposition of copper on substrate 审中-公开
    铜基沉积在基材上

    公开(公告)号:JP2005002471A

    公开(公告)日:2005-01-06

    申请号:JP2004164244

    申请日:2004-06-02

    Abstract: PROBLEM TO BE SOLVED: To provide a method for depositing copper layers on substrates without the aid of an electroless plating method and a dispersion liquid method including metallic particulates.
    SOLUTION: The copper layers are deposited on the substrates by bringing the substrate into contact with a product mixture composed of copper (II) formate and alkoxyalkylamines of formula I: R
    1 -O-(CH
    2 )
    n -CHR
    2 -NH
    2 (R
    1 is methyl or ethyl, R
    2 is hydrogen or methyl and n is 1, 2, 3 or 4) at 80-200°C and under a pressure of 0.1-5 bar.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种无需化学镀方法和包括金属微粒的分散液体方法在基板上沉积铜层的方法。 解决方案:通过使基板与由式I的(II)甲酸盐和式I的烷氧基烷基胺组成的产物混合物与底物沉积在基底上:R 1 SP (R SP)2 乙基,R 2 SP 2是氢或甲基,n是1,2,3或4)在80-200℃和0.1-5巴的压力下进行。 版权所有(C)2005,JPO&NCIPI

    6.
    发明专利
    未知

    公开(公告)号:DE102004052086A1

    公开(公告)日:2006-04-27

    申请号:DE102004052086

    申请日:2004-10-26

    Applicant: BASF AG

    Abstract: The invention relates to a capacitor having a porous electrically conductive substrate on whose inner and outer surfaces a first layer of a dielectric and an electrically conductive second layer are applied. The invention also relates to a method for the production of such capacitors and to their use in electrical and electronic circuits.

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