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    CLEAVABLE ADDITIVES FOR USE IN A METHOD OF MAKING A SEMICONDUCTOR SUBSTRATE
    2.
    发明申请
    CLEAVABLE ADDITIVES FOR USE IN A METHOD OF MAKING A SEMICONDUCTOR SUBSTRATE 审中-公开

    公开(公告)号：WO2019192990A1

    公开(公告)日：2019-10-10

    申请号：PCT/EP2019/058247

    申请日：2019-04-02

    Applicant: BASF SE

    Inventor： KLIPP, Andreas ,  BITTNER, Christian ,  BRAUN, Simon ,  OETTER, Guenter ,  BURK, Yeni

    IPC: H01L21/321

    Abstract: The use of an organic compound as cleavable additive, preferably as cleavable surfactant, in the modification and/or treatment of at least one surface of a semiconductor substrate is described. Moreover, it is described a method of making a semiconductor substrate, comprising contacting at least one surface thereof with an organic compound, or with a composition comprising it, to treat or modify said surface, cleaving said organic compound into a set of fragments and removing said set of fragments from the contacted surface. More in particular, a method of cleaning or rinsing a semiconductor substrate or an intermediate semiconductor substrate is described. In addition, a compound is described which is suitable for the uses and methods pointed out above and which preferably is a cleavable surfactant.

    COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING
    3.
    发明申请
    COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING 审中-公开
    用于化学机械抛光清洁的组合物

    公开(公告)号：WO2017211653A1

    公开(公告)日：2017-12-14

    申请号：PCT/EP2017/063215

    申请日：2017-05-31

    Applicant: BASF SE

    Inventor： DAESCHLEIN, Christian ,  SIEBERT, Max ,  LAUTER, Michael ,  LEUNISSEN, Leonardus ,  GARCIA ROMERO, Ivan ,  GUEVENC, Haci Osman ,  PRZYBYLSKI, Peter ,  PROELSS, Julian ,  KLIPP, Andreas

    IPC: C11D1/72 ,  C11D1/722 ,  C11D3/37 ,  C11D11/00 ,  H01L21/02

    CPC classification number: C11D1/721 ,  C11D1/722 ,  C11D3/3765 ,  C11D11/0047 ,  H01L21/02074 ,  H05K3/26

    Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R 1 and R 3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-Butyl, or sec-butyl, R 2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

    Abstract translation: 描述了后化学机械抛光（CMP后）清洁组合物，其包含以下成分或由以下成分组成：（A）一种或多种通式（I）的水溶性非离子共聚物及其混合物 （I）其中R 1和R 3彼此独立地为氢，甲基，乙基，正丙基，异丙基，正丁基，异丁基，异丁基， 或仲丁基，R 2为甲基且x和y为整数，1（B）聚（丙烯酸）（PAA）丙烯酸 - 马来酸共聚物，其质量平均摩尔质量为Mw ）至10,000克/摩尔，和（C）水，其中组合物的pH在7.0至10.5的范围内。

    POST ION IMPLANT STRIPPER FOR ADVANCED SEMICONDUCTOR APPLICATION
    4.
    发明申请
    POST ION IMPLANT STRIPPER FOR ADVANCED SEMICONDUCTOR APPLICATION 审中-公开
    适用于高级半导体应用的离子注入式剥离器

    公开(公告)号：WO2011012559A2

    公开(公告)日：2011-02-03

    申请号：PCT/EP2010/060762

    申请日：2010-07-26

    Applicant: BASF SE ,  CHEN, ChienShin ,  SHEN, MeiChin ,  CHAN, ChiaHao ,  KLIPP, Andreas

    Inventor： CHEN, ChienShin ,  SHEN, MeiChin ,  CHAN, ChiaHao ,  KLIPP, Andreas

    IPC: H01L21/311 ,  G03F7/42

    CPC classification number: H01L21/31133 ,  C11D11/0047 ,  G03F7/425

    Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free ( 2 O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

    Abstract translation: 本发明涉及基本上无水的光刻胶剥离组合物。 特别地，本发明涉及用于在离子注入工艺之后除去光刻胶的基本上无水的光刻胶剥离组合物，其包含：（a）胺，（b）有机溶剂A和（c）共溶剂 其中该组合物基本上不含水（<3wt％H 2 O）。 本发明还提供了通过使用本发明的组合物进行离子后注入剥离的方法。

    COMPOSITION, ITS USE AND A PROCESS FOR REMOVING POST-ETCH RESIDUES
    5.
    发明申请
    COMPOSITION, ITS USE AND A PROCESS FOR REMOVING POST-ETCH RESIDUES 审中-公开

    公开(公告)号：WO2022043111A1

    公开(公告)日：2022-03-03

    申请号：PCT/EP2021/072719

    申请日：2021-08-16

    Applicant: BASF SE

    Inventor： KLIPP, Andreas ,  CHANG, Chia Wei ,  YU, Meng Ju ,  KE, Jhih Jheng ,  CHEN, Cheng Shun

    IPC: H01L21/306 ,  H01L21/02 ,  C11D11/00

    Abstract: The present invention relates to a composition for removing post-etch residues in the presence of a layer comprising silicon and a dielectric layer comprising a silicon oxide, the composition comprising:(a) 0.005 to 0.3 % by weight HF;(b) 0.01 to 1 % by weight of an ammonium fluoride of formula NRE4F, wherein RE is H or a C1 to C4 alkyl group; (c) 5 to 30 % by weight of an organic solvent selected from a sulfoxide and a sulfone; (d) 70 % by weight or more water, and(e) optionally 0.01 to 1 % by weight of an ammonium compound selected from ammonia and a C4 to C20 quaternized aliphatic ammonium.

    IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN
    6.
    发明申请
    IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN 审中-公开

    公开(公告)号：WO2019192866A1

    公开(公告)日：2019-10-10

    申请号：PCT/EP2019/057377

    申请日：2019-03-25

    Applicant: BASF SE

    Inventor： HOOGBOOM, Joannes Theodorus Valentinus ,  KLIPP, Andreas ,  KE, Jhih Jheng ,  CHENG, Yi Ping

    IPC: G03F7/42

    Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

    RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES
    9.
    发明申请
    RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES 审中-公开
    电阻剥离组合物和制造电气装置的方法

    公开(公告)号：WO2010127943A1

    公开(公告)日：2010-11-11

    申请号：PCT/EP2010/055205

    申请日：2010-04-20

    Applicant: BASF SE ,  KLIPP, Andreas

    Inventor： KLIPP, Andreas

    IPC: G03F7/42 ,  H01L21/02

    CPC classification number: G03F7/425 ,  G03F7/20 ,  H01L21/02063 ,  H01L21/31133

    Abstract: A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50°C of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to

    Abstract translation: 不含N-烷基吡咯烷酮和羟胺及其衍生物的液体组合物，其在50℃下的动态剪切粘度为1至10mPa·s，通过旋转粘度测定测量，并包含基于组合物的完全重量（A） 在溶解的四甲基氢氧化铵（B）存在下显示的极性有机溶剂的40至99.95重量％，对于含有深紫外线吸收发色团的30nm厚的聚合物屏障抗反射层，在50℃下的恒定去除速率（ B）为0.05至0.5％的季铵氢氧化物，和（C）<5重量％的水; 其制备方法，用于制造电子器件的方法及其用于消除负色调和正色调光致抗蚀剂以及在制造3D堆叠集成电路和3D晶片级封装中的后蚀刻残留物的用途，通过图案化通过硅通孔和/ 或通过电镀和碰撞。

    COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL
    10.
    发明申请
    COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL 审中-公开

    公开(公告)号：WO2022043165A1

    公开(公告)日：2022-03-03

    申请号：PCT/EP2021/072975

    申请日：2021-08-18

    Applicant: BASF SE

    Inventor： LOPEZ VILLANUEVA, Francisco Javier ,  KLIPP, Andreas ,  FRISCHHUT, Sabine ,  LO, Chih Hui ,  SHEN, Mary

    IPC: H01L21/306

    Abstract: A composition for selectively etching a layer comprising a silicon germanium alloy (SiGe) in the presence of a a layer comprising silicon, the composition comprising: (a) 5 to 15 % by weight of an oxidizing agent; (b) 5 to 20 % by weight of an etchant comprising a source of fluoride ions; (c) 0.001 to 3 % by weight of a first selectivity enhancer of formula S1(S1) and (d) water, wherein RS1 is selected from XS-OH and YS-(CO)-OHRS2 is selected from (i) RS1, (ii) H, (iii) C1 to C10 alkyl, (iv) C1 to C10 alkenyl, (v) C1 to C10 alkynyl, and (vi) -XS-(O-C2H3RS6)m-ORS6; RS6 is selected from H and C1 to C6 alkyl; XS is selected from a linear or branched C1 to C10 alkanediyl, a linear or branched C2 to C10 alkenediyl, linear or branched C2 to C10 alkynediyl, and -XS1-(O-C2H3R6)m-; YS1 is selected from a chemical bond and X; XS2 is a C1 to C6 alkanediyl;m is an integer of from 1 to 10.

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