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    COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT
    4.
    发明公开
    COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT 审中-公开
    ZUSAMMENSETZUNG ZUR METALLGALVANISIERUNG MIT VERLAUFMITTEL

    公开(公告)号：EP2917265A4

    公开(公告)日：2016-06-29

    申请号：EP13852692

    申请日：2013-10-30

    Applicant: BASF SE

    Inventor： KIENLE MARCEL PATRIK ,  MAYER DIETER ,  RÖGER-GÖPFERT CORNELIA ,  HAAG ALEXANDRA ,  EMNET CHARLOTTE ,  FLÜGEL ALEXANDER ,  ARNOLD MARCO

    IPC: C08G73/14 ,  C23C18/38 ,  C25D3/32 ,  C25D3/38

    CPC classification number: C25D3/38 ,  C23C18/38 ,  C25D3/32

    Abstract: A composition comprising a source of metal ions and at least one additive comprising at least one polyaminoamide, said polyaminoamide comprising the structural unit represented by formula I or derivatives of the polyaminoamide of formula I obtainable by complete or partial protonation, N-functionalization or N-quaternization with a non-aromatic reactant, wherein D6 is, for each repeating unit 1 to s independently, a divalent group selected from a saturated or unsaturated C1-C20 organic radical, D7 is, for each repeating unit 1 to s independently, a divalent group selected from straight chain or branched C2-C20 alkanediyl, which may optionally be interrupted by heteroatoms or divalent groups selected from O, S and NR10, R1 is, for each repeating unit 1 to s independently, selected from H, C1-C20 alkyl, and C1-C20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, or, together with R2, may form a divalent group D8, and R2 is, for each repeating unit 1 to s independently, selected from H, C1-C20 alkyl, and C1-C20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, or, together with R1, may form a divalent group D8, and D8 is selected from straight chain or branched C1-C18 alkanediyl, which may optionally be interrupted by heteroatoms or divalent groups selected from O, S and NR10, s is an integer from 1 to 250, R10 is selected from H, C1-C20 alkyl, and C1-C20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl.

    Abstract translation: 包含金属离子源和至少一种包含至少一种聚氨基酰胺的添加剂的组合物，所述聚氨基酰胺包括由式I表示的结构单元或通过完全或部分质子化获得的式I的聚氨基酰胺的衍生物，N-官能化或N- 用非芳族反应物进行季铵化反应，其中D6对于每个重复单元1独立地选自饱和或不饱和的C 1 -C 20有机基团中的二价基团，D 7对于每个重复单元1独立地是二价 选自直链或支链C 2 -C 20烷二基的基团，其可任选被杂原子或选自O，S和NR 10的二价基团中断，R 1为每个重复单元1至s独立地选自H，C 1 -C 20烷基 和可以任选被羟基，烷氧基或烷氧基羰基取代的C1-C20烯基，或者与R2一起可以形成二价基团D8，R2是每个重复单元1〜 独立地选自H，C 1 -C 20烷基和C 1 -C 20链烯基，其可以任选地被羟基，烷氧基或烷氧基羰基取代，或者与R 1一起可以形成二价基团D8，并且D8选自直链 或支链C 1 -C 18烷二基，其可任选被杂原子或选自O，S和NR 10的二价基团中断，s为1至250的整数，R 10选自H，C 1 -C 20烷基和C 1 -C 20链烯基 ，其可以任选地被羟基，烷氧基或烷氧基羰基取代。

    USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE-SPACE DIMENSIONS BELOW 50NM
    5.
    发明公开
    USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE-SPACE DIMENSIONS BELOW 50NM 审中-公开
    VERWENDUNG VON TENSIDEN MIT MINDESTENS DREI KURZKETTIGEN PERFLUORIERTEN GRUPPEN ZUR HERSTELLUNG INTEGRIERTER SCHALTKREISE MIT MUSINS MIT ZEILENABSTANDSABMESSUNGEN UNTER 50 NM

    公开(公告)号：EP2668248A4

    公开(公告)日：2017-09-13

    申请号：EP12739044

    申请日：2012-01-17

    Applicant: BASF SE

    Inventor： KLIPP ANDREAS ,  MAYER DIETER

    IPC: C09K13/08 ,  C11D11/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

    CPC classification number: H01L21/0337 ,  C11D11/0047 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/405

    Abstract: The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension 3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresists comprising patterns having line-space dimensions below 50 nm and aspect ratios >3. By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles.

    Abstract translation: 使用表面活性剂A，其1重量％水溶液表现出<25mN / m的静态表面张力，所述表面活性剂A含有至少三个选自三氟甲基，五氟乙基，三氟甲基， 1-七氟丙基，2-七氟丙基，七氟异丙基和五氟硫烷基; 用于制造包括具有低于50nm的线间距尺寸和高宽比> 3的图案的集成电路; 以及使用浸渍光致抗蚀剂层中的表面活性剂A，暴露于光化辐射的光致抗蚀剂层，用于曝光的光致抗蚀剂层的显影剂溶液和/或用于显影的图案化光致抗蚀剂的化学冲洗溶液中的光刻工艺，其包括线空间尺寸低于50nm 和纵横比> 3。 通过表面活性剂A，防止图案坍塌，减小线边缘粗糙度，防止和去除水印缺陷，并通过去除颗粒来减少缺陷。

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