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公开(公告)号：DE602005024674D1
公开(公告)日：2010-12-23
申请号：DE602005024674
申请日：2005-04-14
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
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公开(公告)号：WO2007081549A3
公开(公告)日：2008-04-10
申请号：PCT/US2006049181
申请日：2006-12-26
Applicant: BINOPTICS CORP , BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
Inventor： BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
CPC classification number: H01S5/0262 , G02B6/4214 , G02B6/4246 , H01L31/03046 , H01L31/105 , H01L31/107 , H01L31/153 , H01L31/1844 , H01S5/005 , H01S5/0078 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0264 , H01S5/0267 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , Y02E10/544
Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.
Abstract translation: 集成在单个芯片的相应外延层上的激光和检测器与片上和/或外部光学器件配合，将由激光器发射的第一波长的光耦合到单个外部设备（例如光纤），并同时耦合光 从外部设备接收到不同波长的检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。 在邻近激光器一端的检测器外延中制造监测光电检测器。
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公开(公告)号：WO2005072224A3
公开(公告)日：2005-10-20
申请号：PCT/US2005001783
申请日：2005-01-19
Applicant: BINOPTICS CORP , BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
Inventor： BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
CPC classification number: H01S5/0264 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02292 , H01S5/0262 , H01S5/0683 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , H01S5/4087
Abstract: Abstract of the Disclosure A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
Abstract translation: 发明内容集成在单个芯片（20）的相应外延层上的激光器（22）和检测器（24）与片上和/或外部光学器件（62）配合以耦合由激光器发射的第一波长的光 耦合到诸如光纤（60）的单个外部设备，并且将从外部设备接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。
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公开(公告)号：WO2005025017A3
公开(公告)日：2005-07-07
申请号：PCT/US2004025601
申请日：2004-08-31
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , MURO KIOFUMI , STAGARESCU CRISTIAN B , SCHREMER ALFRED T
IPC: G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an A1GalnAs/InP laser cavity (70), a front mirror stack (32) with multiple Fabry-Perot elements (60, 62, 64, 66), a rear DBR reflector (68), and rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets (72, 76), and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer (30) by a two-step lithography and CAIBE process.
Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGalnAs / InP激光腔（70），具有多个法布里 - 珀罗元件（60,62,64,66）的前反射镜叠层（32），后DBR反射器 68）和后检测器。 前反射镜叠层元件和后反射器元件包括输入和输出蚀刻刻面（72,76），并且激光腔是蚀刻的隆起腔，全部由外延晶片（30）通过两步光刻和CAIBE工艺形成 。
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公开(公告)号：WO2007002024A3
公开(公告)日：2009-04-30
申请号：PCT/US2006023889
申请日：2006-06-20
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER ALFRED T , STAGARESCU CRISTIAN B , NLN VAINATEYA NMI
CPC classification number: H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500 °C and an ion beam in excess of 500 V in CAIBE.
Abstract translation: 一种制造能够发射蓝光的激光的工艺，其中在CAIBE中使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜。
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Patent Agency Ranking
公开(公告)号：WO2006130700A3
公开(公告)日：2007-11-01
申请号：PCT/US2006021132
申请日：2006-06-01
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER ALFRED T
CPC classification number: H01S5/028 , H01S5/0203 , H01S5/0286 , H01S5/0287 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S2301/166
Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
Abstract translation: 蚀刻小面单横向半导体光子器件通过在蚀刻刻面上沉积抗反射涂层并以空间受控的方式沉积反射率修饰涂层来制造，以改变发射光束的空间性能。
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公开(公告)号：WO2005107026A3
公开(公告)日：2007-03-01
申请号：PCT/US2005012413
申请日：2005-04-14
Applicant: BINOPTICS CORP , BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
Inventor： BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
IPC: H01S5/00 , G02B6/12 , G02B6/122 , G02B6/13 , G02F1/017 , H01S5/026 , H01S5/028 , H01S5/0683 , H01S5/10 , H01S5/22 , H01S5/343
CPC classification number: B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
Abstract: A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.
Abstract translation: 激光器（40）和电吸收调制器（EAM）（44）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构（44）的第二层。 通过使用两个45度旋转镜（52和66）将光从激光波导垂直地路由到EAM波导（44）来实现激光器和EAM（44）之间的强耦合。 使用定向角蚀刻工艺来形成两个成角度的小平面。
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公开(公告)号：EP1668749A4
公开(公告)日：2007-11-28
申请号：EP04780438
申请日：2004-08-31
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , MURO KIOFUMI , STAGARESCU CRISTIAN B , SCHREMER ALFRED T
IPC: H01S5/00 , G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an A1GalnAs/InP laser cavity (70), a front mirror stack (32) with multiple Fabry-Perot elements (60, 62, 64, 66), a rear DBR reflector (68), and rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets (72, 76), and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer (30) by a two-step lithography and CAIBE process.
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公开(公告)号：EP1735884A4
公开(公告)日：2008-05-14
申请号：EP05744345
申请日：2005-04-14
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , GREEN MALCOLM R , SCHREMER ALFRED T
IPC: H01S5/00 , G02B6/12 , G02B6/122 , G02B6/13 , G02F1/017 , H01S5/026 , H01S5/028 , H01S5/0683 , H01S5/10 , H01S5/22 , H01S5/343
CPC classification number: B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
Abstract: A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.
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公开(公告)号：EP1428245A4
公开(公告)日：2005-11-16
申请号：EP02747946
申请日：2002-07-15
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX , SCHREMER ALFRED T , STAGARESCU CRISTIAN B
IPC: G03F7/20 , B81C1/00 , G02B6/12 , G02B6/13 , G02B6/42 , G03F7/00 , G03F7/09 , G03F7/095 , G03F7/11 , H01L21/027
CPC classification number: G02B6/12002 , B81B2201/047 , B81C99/008 , B81C2201/0159 , G02B6/13 , G02B6/4204 , G02B6/4249 , G03F7/0037 , Y10S438/948 , Y10S438/949 , Y10S438/95
Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate (10) through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer (14) of photoresist material is spun onto a substrate (10) surface (18) and is exposed (26) in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer (30) of photoresist material is deposited and is also exposed (32) in a desired pattern. Subsequent layers (40,52,64) spun onto the top surface of prior layers (14,30) and exposed (44,54,66), and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure (22).
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