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公开(公告)号：AU2003256258A1
公开(公告)日：2004-03-11
申请号：AU2003256258
申请日：2003-06-30
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER JR ALFRED T , STAGARESCU CRISTIAN B
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公开(公告)号：WO2007002024A3
公开(公告)日：2009-04-30
申请号：PCT/US2006023889
申请日：2006-06-20
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER ALFRED T , STAGARESCU CRISTIAN B , NLN VAINATEYA NMI
CPC classification number: H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500 °C and an ion beam in excess of 500 V in CAIBE.
Abstract translation: 一种制造能够发射蓝光的激光的工艺，其中在CAIBE中使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜。
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公开(公告)号：WO2004019460A9
公开(公告)日：2005-01-13
申请号：PCT/US0316246
申请日：2003-06-30
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER JR ALFRED T , STAGARESCU CRISTIAN B
CPC classification number: H01S5/1071 , H01S5/0265 , H01S5/062 , H01S5/065 , H01S5/1039 , H01S5/40 , H01S5/50
Abstract: An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.
Abstract translation: 能够发射所选波长的光的集成半导体激光器件包括与公共输出串联或并联耦合的不同腔长度的多个环形激光器，以产生具有对应于所选环形激光器的波长的输出光束。
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公开(公告)号：WO2005025017A3
公开(公告)日：2005-07-07
申请号：PCT/US2004025601
申请日：2004-08-31
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , MURO KIOFUMI , STAGARESCU CRISTIAN B , SCHREMER ALFRED T
IPC: G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an A1GalnAs/InP laser cavity (70), a front mirror stack (32) with multiple Fabry-Perot elements (60, 62, 64, 66), a rear DBR reflector (68), and rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets (72, 76), and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer (30) by a two-step lithography and CAIBE process.
Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGalnAs / InP激光腔（70），具有多个法布里 - 珀罗元件（60,62,64,66）的前反射镜叠层（32），后DBR反射器 68）和后检测器。 前反射镜叠层元件和后反射器元件包括输入和输出蚀刻刻面（72,76），并且激光腔是蚀刻的隆起腔，全部由外延晶片（30）通过两步光刻和CAIBE工艺形成 。
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5.发明申请HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE 审中-公开高速SMSR单向蚀刻激光器和低反射光电装置
公开(公告)号：WO2004084607A3
公开(公告)日：2005-06-16
申请号：PCT/US2004008063
申请日：2004-03-18
Applicant: BINOPTICS CORP , BEHFAR ALEX A , SCHREMER ALFRED T JR , STAGARESCU CRISTIAN B
Inventor： BEHFAR ALEX A , SCHREMER ALFRED T JR , STAGARESCU CRISTIAN B
CPC classification number: H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/125 , H01S5/14
Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
Abstract translation: 通过在激光腔中形成一个或多个蚀刻间隙（78,80）来增强激光器的单向性。 可以在激光器的任何部分（例如环形激光器的任何腿部）中或在V形激光器（60）的一个腿部（62）中提供间隙。 耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。 在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。
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Patent Agency Ranking
公开(公告)号：EP1668749A4
公开(公告)日：2007-11-28
申请号：EP04780438
申请日：2004-08-31
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , MURO KIOFUMI , STAGARESCU CRISTIAN B , SCHREMER ALFRED T
IPC: H01S5/00 , G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an A1GalnAs/InP laser cavity (70), a front mirror stack (32) with multiple Fabry-Perot elements (60, 62, 64, 66), a rear DBR reflector (68), and rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets (72, 76), and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer (30) by a two-step lithography and CAIBE process.
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7.发明公开HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE 审中-公开单向激光蚀刻高SMSR和光子器件具有低背反射
公开(公告)号：EP1609221A4
公开(公告)日：2006-05-24
申请号：EP04757753
申请日：2004-03-18
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER ALFRED T JR , STAGARESCU CRISTIAN B
IPC: H01S3/083 , G02B6/12 , G02B6/125 , H01S3/00 , H01S3/08 , H01S5/00 , H01S5/10 , H01S5/125 , H01S5/14
CPC classification number: H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/125 , H01S5/14
Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
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公开(公告)号：EP1428245A4
公开(公告)日：2005-11-16
申请号：EP02747946
申请日：2002-07-15
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX , SCHREMER ALFRED T , STAGARESCU CRISTIAN B
IPC: G03F7/20 , B81C1/00 , G02B6/12 , G02B6/13 , G02B6/42 , G03F7/00 , G03F7/09 , G03F7/095 , G03F7/11 , H01L21/027
CPC classification number: G02B6/12002 , B81B2201/047 , B81C99/008 , B81C2201/0159 , G02B6/13 , G02B6/4204 , G02B6/4249 , G03F7/0037 , Y10S438/948 , Y10S438/949 , Y10S438/95
Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate (10) through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer (14) of photoresist material is spun onto a substrate (10) surface (18) and is exposed (26) in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer (30) of photoresist material is deposited and is also exposed (32) in a desired pattern. Subsequent layers (40,52,64) spun onto the top surface of prior layers (14,30) and exposed (44,54,66), and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure (22).
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9.发明公开ALGAINN-BASED LASERS PRODUCED USING ETCHED FACET TECHNOLOGY 审中-公开ALCHINN-BASED LASER生产的ETCH FACET技术
公开(公告)号：EP1894280A4
公开(公告)日：2014-03-26
申请号：EP06785144
申请日：2006-06-20
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER ALFRED T , STAGARESCU CRISTIAN B , NLN VAINATEYA NMI
CPC classification number: H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
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公开(公告)号：EP1552587A4
公开(公告)日：2006-03-01
申请号：EP03792940
申请日：2003-06-30
Applicant: BINOPTICS CORP
Inventor： BEHFAR ALEX A , SCHREMER JR ALFRED T , STAGARESCU CRISTIAN B
CPC classification number: H01S5/1071 , H01S5/0265 , H01S5/062 , H01S5/065 , H01S5/1039 , H01S5/40 , H01S5/50
Abstract: An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.
Abstract translation: 能够发射选定波长的光的集成半导体激光器装置包括与公共输出串联或并联耦合的不同谐振腔长度的多个环形激光器，以产生具有对应于所选环形激光器的波长的输出光束。
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