公开(公告)号：WO2022035734A1

公开(公告)日：2022-02-17

申请号：PCT/US2021/045164

申请日：2021-08-09

Applicant: BREWER SCIENCE, INC.

Inventor： ZHONG, Xing-Fu ,  HUANG, Runhui ,  XU, Gu ,  SIMMONS, Sean ,  SWEAT, Daniel ,  KOZA, Jakub

IPC: G03F7/11 ,  C08L79/08 ,  C08K5/13 ,  C08K5/053 ,  C08K5/49 ,  C08G73/10 ,  H01L21/033 ,  H01L21/02

Abstract: A high-temperature-stable spin-on-carbon ("SOC") material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SCI resistant, especially on TiN and SiOx surfaces.

公开(公告)号：WO2013055798A1

公开(公告)日：2013-04-18

申请号：PCT/US2012/059565

申请日：2012-10-10

Applicant: BREWER SCIENCE INC. ,  KRISHNAMURTHY, Vandana ,  SULLIVAN, Daniel M. ,  WANG, Yubao ,  LIN, Qin ,  SIMMONS, Sean

Inventor： KRISHNAMURTHY, Vandana ,  SULLIVAN, Daniel M. ,  WANG, Yubao ,  LIN, Qin ,  SIMMONS, Sean

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料可用于三层光刻工艺。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。

公开(公告)号：EP2766920B1

公开(公告)日：2020-12-02

申请号：EP12840652.7

申请日：2012-10-10

Applicant: Brewer Science Inc.

Inventor： KRISHNAMURTHY, Vandana ,  SULLIVAN, Daniel M. ,  WANG, Yubao ,  LIN, Qin ,  SIMMONS, Sean

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205 ,  C09D179/08

公开(公告)号：EP2766920A1

公开(公告)日：2014-08-20

申请号：EP12840652.7

申请日：2012-10-10

Applicant: Brewer Science, Inc.

Inventor： KRISHNAMURTHY, Vandana ,  SULLIVAN, Daniel M. ,  WANG, Yubao ,  LIN, Qin ,  SIMMONS, Sean

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

公开(公告)号：EP4193221A1

公开(公告)日：2023-06-14

申请号：EP21856496.1

申请日：2021-08-09

Applicant: Brewer Science Inc.

Inventor： ZHONG, Xing-Fu ,  HUANG, Runhui ,  XU, Gu ,  SIMMONS, Sean ,  SWEAT, Daniel ,  KOZA, Jakub

IPC: G03F7/11 ,  C08L79/08 ,  C08K5/13 ,  C08K5/053 ,  C08K5/49 ,  C08G73/10 ,  H01L21/033 ,  H01L21/02