SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING

    公开(公告)号:SG179209A1

    公开(公告)日:2012-05-30

    申请号:SG2012019063

    申请日:2010-09-15

    Abstract: Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.

    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING
    2.
    发明申请
    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING 审中-公开
    背面处理时用于保护前端电路的抗刮擦涂层

    公开(公告)号:WO2011034897A3

    公开(公告)日:2011-07-14

    申请号:PCT/US2010048899

    申请日:2010-09-15

    Abstract: Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.

    Abstract translation: 提供了用于在背面处理期间保护正面微机电和半导体器件特征的耐刮擦涂层以及使用该涂层的方法。 该涂层是非光敏的,可移除的,并且可以承受高的加工温度。 这些涂层也消除了在器件设计中需要单独的蚀刻停止层。 该涂层由包含溶解或分散在溶剂体系中的组分的组合物形成。 该组分选自苯乙烯 - 丙烯腈共聚物和芳族砜聚合物。

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    3.
    发明申请
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 审中-公开
    微电子基片湿蚀刻加工的SPIN-ON保护涂层

    公开(公告)号:WO2009035866A3

    公开(公告)日:2009-05-14

    申请号:PCT/US2008074773

    申请日:2008-08-29

    Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    Abstract translation: 提供了用于半导体和MEMS器件生产期间的湿法蚀刻工艺的新的保护涂层。 这些层包括底漆层,第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯,丙烯腈和相容性化合物如单体,低聚物和包含环氧基团的聚合物制备的热塑性共聚物; 聚(苯乙烯 - 共 - 烯丙醇); 和它们的混合物。 第二保护层包含高度卤化的聚合物,例如氯化聚合物,其可以在加热时交联或不交联。

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