Abstract:
A method for selective metallization of a surface of a polymer article is provided. The polymer article contains a base polymer and at least one metal compound dispersed in the base polymer. The method includes gasifying at least a part of a surface of the polymer article by irradiating the surface with an energy source, and forming at least one metal layer on the surface of the polymer article by chemical plating. The metal compound contains a tin oxide doped with at least one doping element selected from a group including: V, Sb, In, and Mo.
Abstract:
A method for integrally molding a metal and a resin and a metal-resin composite structure obtainable by the same are provided. The method comprises forming a nanopore in a surface of a metal sheet; melting a thermoplastic resin on the surface of the metal sheet formed with the nanopore; and injection molding the thermoplastic resin onto the surface of the metal sheet. The thermoplastic resin is a mixture of a main resin and a polyolefin resin, the main resin is a mixture of polyphenylene oxide and a polyamide, and the polyolefin resin has a melting point of about 65° C. to about 105° C.
Abstract:
A method for integrally molding a metal and a resin and a metal-resin composite structure obtainable by the same are provided. The method comprises forming a nanopore in a surface of a metal sheet; melting a thermoplastic resin on the surface of the metal sheet formed with the nanopore; and injection molding the thermoplastic resin onto the surface of the metal sheet. The thermoplastic resin includes a mixture of a main resin and a polyolefin resin, the main resin is a polycarbonate, and the polyolefin resin has a melting point of about 65° C. to about 105° C.
Abstract:
A metal-resin composite and method for producing the same are provided. The method comprises: A) forming nanopores in at least a part of a surface of a metal sheet; and B) injection molding a thermoplastic resin directly on the surface of the metal sheet. The thermoplastic resin includes a main resin and a polyolefin resin. The main resin includes a mixture of polyphenylene ether and polyphenylene sulfide. And the polyolefin resin has a melting point of about 65° C. to about 105° C.
Abstract:
The present disclosure provides a metal compound. The metal compound is represented by a formula (I): Cu2AαB2-αO4-β (I). A contains at least one element selected from the groups 6 and 8 of the periodic table. B contains at least one element selected from the group 13 of the periodic table, 0
Abstract:
Disclosed are an active metal brazing paste composition, a brazing paste and a method for brazing ceramics and metals. The composition includes a binder and metal powder. The metal powder includes active metal brazing powder and brazing-aid metal powder. The brazing-aid metal powder contains copper powder and/or copper-silver alloy powder. The active metal brazing powder is alloy powder containing copper, silver, and an active metal. With the total weight of the metal powder as a reference, the content of the active metal is 1.5 wt % or more, the content of silver is 40 wt % to 90 wt %, and the content of oxygen is 0.5 wt % or less.
Abstract:
The present invention discloses a low-dielectric resin composition, a low-dielectric resin/metal composite material and a preparation method thereof, and an electronic device. The resin composition comprises, based on 100% by weight of the resin composition: 45-70 wt % of a base resin, 20-45 wt % of a chopped glass fiber, 1-3 wt % of a toughening resin, 0.2-0.5 wt % of an unmodified glycidyl methacrylate, and 0-10 wt % of an auxiliary. The base resin is selected from the PBT resin and/or the PPS resin. The chopped glass fiber has a dielectric constant of 4.0 to 4.4 at 1 MHz. With the same base resin component, the dielectric constant and dielectric loss of the low-dielectric resin material prepared with the low-dielectric resin composition are significantly reduced, which is advantageous for satisfying the requirements of use of plastics for antenna channels in metal shell of an electronic device, so as to improve the ability of the electronic device having antennas to receive and transmit signals.
Abstract:
Embodiments of the present disclosure are directed to a doped tin oxide. The doped tin oxide includes a tin oxide and at least one oxide of a doping element. The doping element includes at least one of vanadium and molybdenum. The doped tin oxide includes an amount of the tin oxide ranging from 90 mol % to 99 mol %, and an amount of the at least one oxide ranging from 1 mol % to 10 mol %.
Abstract:
The present disclosure relates to the field of silica gel, and discloses a liquid optical silica gel composition, optical silica gel, a double-glazed photovoltaic assembly and a fabrication method of the optical silica gel. The present disclosure discloses a liquid optical silica gel composition. The composition contains vinyl silicone oil, hydrogen-containing silicone oil, hydrogen-containing MQ silicone resin, a catalyst, an inhibitor and a tackifier. The weight ratio between the vinyl silicone oil, the hydrogen-containing silicone oil, the hydrogen-containing MQ silicone resin and the tackifier is 1:(0.001-0.1):(0.0001-0.08):(0.001-0.05). The hydrogen-containing silicone oil contains first hydrogen-containing silicone oil and second hydrogen-containing silicone oil. The first hydrogen-containing silicone oil has a hydrogen content of 0.1 to 1 percent by weight. The second hydrogen-containing silicone oil has a hydrogen content of 0.01 to 0.1 percent by weight. The hydrogen-containing MQ silicone resin has a hydrogen content less than 1 percent by weight.
Abstract:
A semiconductor refrigeration chip and a method for manufacturing same are provided. The method includes: providing a semiconductor refrigeration assembly, where the semiconductor refrigeration assembly includes a first insulating and heat-conducting layer and a second insulating and heat-conducting layer provided opposite to each other and a semiconductor layer arranged between the first insulating and heat-conducting layer and the second insulating and heat-conducting layer, a side of the semiconductor refrigeration assembly provided with the first insulating and heat-conducting layer is a cold end, and a side of the semiconductor refrigeration assembly provided with the second insulating and heat-conducting layer is a hot end; and forming a packaging structure, and causing the packaging structure to cover a side wall of the semiconductor refrigeration assembly and define a first groove with the first insulating and heat-conducting layer, to obtain the semiconductor refrigeration chip.