Multilayer electrode structure and method for forming

    公开(公告)号:AU6668401A

    公开(公告)日:2001-12-11

    申请号:AU6668401

    申请日:2001-05-31

    Abstract: A first embodiment (Figs. 29A-29H) comprises a multilayer electrode (2906) for a panel display device and a method for forming a nultilayer electrode (2906) for a flat panel display device. The multilayer electrode (2096) is formed by depositing a metal alloy layer (2902). After the deposition of the metal alloy layer (2902), a protective layer (2904) is deposited above the metal alloy layer (2902) to form a multilayer stack (2906). The multilayer stack (2906) is subjected to a cleansing process to remove contaminants. Subsequently, the multilayer stack (2906) is etched to form the multilayer electrode (2906) for the flat panel display device. Another embodiment (Figs. 30-311) comprises a method of forming a multilayer stack (3106) is formed by depositing a first metal alloy layer (3102) above the substrate (3100). After the deposition of te metal alloy layer (3102), a barrier layer (3103) is formed above the first metal alloy layer (3102). The barrier layer (3103) is adapted to prevent the formation of an intermetallic compound within the first metal alloy layer (3102). Subsequently, a second metal alloy layer (3104) is deposited above the barrier layer (3103). The barrier layer (3103) prevents the formation of the intermetallic compound within the second metal alloy layer (3104).

    MULTILAYER ELECTRODE STRUCTURE AND METHOD FOR FORMING
    2.
    发明公开
    MULTILAYER ELECTRODE STRUCTURE AND METHOD FOR FORMING 审中-公开
    MEHRSCHICHTIGE ELEKTRODENSTRUKTUR UND HERSTELLUNGSVERFAHREN

    公开(公告)号:EP1297548A4

    公开(公告)日:2005-11-23

    申请号:EP01944257

    申请日:2001-05-31

    CPC classification number: H01J9/025 H01J9/148 H01J29/02

    Abstract: A first embodiment (Figs. 29A-29H) comprises a multilayer electrode (2906) for a panel display device and a method for forming a nultilayer electrode (2906) for a flat panel display device. The multilayer electrode (2096) is formed by depositing a metal alloy layer (2902). After the deposition of the metal alloy layer (2902), a protective layer (2904) is deposited above the metal alloy layer (2902) to form a multilayer stack (2906). The multilayer stack (2906) is subjected to a cleansing process to remove contaminants. Subsequently, the multilayer stack (2906) is etched to form the multilayer electrode (2906) for the flat panel display device. Another embodiment (Figs. 30-311) comprises a method of forming a multilayer stack (3106) is formed by depositing a first metal alloy layer (3102) above the substrate (3100). After the deposition of te metal alloy layer (3102), a barrier layer (3103) is formed above the first metal alloy layer (3102). The barrier layer (3103) is adapted to prevent the formation of an intermetallic compound within the first metal alloy layer (3102). Subsequently, a second metal alloy layer (3104) is deposited above the barrier layer (3103). The barrier layer (3103) prevents the formation of the intermetallic compound within the second metal alloy layer (3104).

    Abstract translation: 第一实施例(图29A-29H)包括用于面板显示装置的多层电极(2906)和用于形成平板显示装置的多层电极(2906)的方法。 通过沉积金属合金层(2902)形成多层电极(2096)。 在沉积金属合金层(2902)之后,在金属合金层(2902)的上方沉积保护层(2904)以形成多层叠层(2906)。 对多层堆叠(2906)进行清洁处理以除去污染物。 随后,蚀刻多层堆叠(2906),以形成用于平板显示装置的多层电极(2906)。 另一实施例(图30-311)包括通过在衬底(3100)上沉积第一金属合金层(3102)而形成多层堆叠(3106)的方法。 在金属合金层(3102)的沉积之后,在第一金属合金层(3102)的上方形成阻挡层(3103)。 阻挡层(3103)适于防止在第一金属合金层(3102)内形成金属间化合物。 随后,在阻挡层(3103)的上方沉积第二金属合金层(3104)。 阻挡层(3103)防止在第二金属合金层(3104)内形成金属间化合物。

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