公开(公告)号：EP1029337A4

公开(公告)日：2005-04-06

申请号：EP98936954

申请日：1998-07-21

Applicant: CANDESCENT TECH CORP

Inventor： ELIZONDO PHILIP J ,  CHAKRAVORTY KISHORE K ,  CAUDILLO DAVID

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A method for uniformly depositing polymer particles (800) onto the surface of a gate metal layer during the formation of a gate electrode. In one embodiment, the present invention comprises immersing a substrate (906) having a layer of a gate metal disposed over the surface thereof in a fluid bath (902) containing polymer particles. Additionally, in the present embodiment, the layer of gate metal disposed over the substrate has approximately the same thickness as a desired thickness of the gate electrode to be formed. Next, the present embodiment applies a uniform potential across the surface of the layer of gate metal such that the polymer particles (800) are uniformly deposited onto the layer of gate metal with a spatial density of approximately 100,000,000 to 1,000,000,000,000 particles per square centimeter. In the present embodiment the polymer particles adhere to the surface of the layer of gate metal via Van der Waal's forces and/or via a charge difference between each particle and the layer of gate metal. The present embodiment then removes the substrate having the layer of the gate metal and the particles deposited thereon from the fluid bath.

Abstract translation: 用于聚合物颗粒的均匀沉积到金属栅极的表面上的栅电极的形成过程中的方法。 在一个，在本实施方式本发明包括总是唱具有在流体中的浴，其含有的聚合物颗粒其设置在所述表面上的金属栅极的层的基材。 在此，实施方式中，流体浴被包含在流体浴箱中。 另外，在本实施方式中，设置在基板上的栅极金属的层的厚度大约为所述栅电极的所希望的厚度所形成的相同。 接着，对本实施例应用跨越栅极金属的检查的层的表面均匀的电位做的聚合物粒子均匀地沉积到栅极金属的层。 在这样做时，本实施例的一致沉积在聚合物颗粒到栅金属的层。 另外，在本实施方式中，所述聚合物颗粒附着于通过范德华力和/或经由栅极金属层与各聚合物粒子之间的电荷差的栅极金属层的表面上。 在本实施方式中，所述聚合物颗粒沉积在栅极金属层的表面上每平方厘米1×10 8，大约1×10 -12至粒子的空间密度。 在本实施方式然后移除具有栅极金属的层中的底物和从流体浴沉积在其上的颗粒。