公开(公告)号：EP1029337A4

公开(公告)日：2005-04-06

申请号：EP98936954

申请日：1998-07-21

Applicant: CANDESCENT TECH CORP

Inventor： ELIZONDO PHILIP J ,  CHAKRAVORTY KISHORE K ,  CAUDILLO DAVID

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A method for uniformly depositing polymer particles (800) onto the surface of a gate metal layer during the formation of a gate electrode. In one embodiment, the present invention comprises immersing a substrate (906) having a layer of a gate metal disposed over the surface thereof in a fluid bath (902) containing polymer particles. Additionally, in the present embodiment, the layer of gate metal disposed over the substrate has approximately the same thickness as a desired thickness of the gate electrode to be formed. Next, the present embodiment applies a uniform potential across the surface of the layer of gate metal such that the polymer particles (800) are uniformly deposited onto the layer of gate metal with a spatial density of approximately 100,000,000 to 1,000,000,000,000 particles per square centimeter. In the present embodiment the polymer particles adhere to the surface of the layer of gate metal via Van der Waal's forces and/or via a charge difference between each particle and the layer of gate metal. The present embodiment then removes the substrate having the layer of the gate metal and the particles deposited thereon from the fluid bath.

Abstract translation: 用于聚合物颗粒的均匀沉积到金属栅极的表面上的栅电极的形成过程中的方法。 在一个，在本实施方式本发明包括总是唱具有在流体中的浴，其含有的聚合物颗粒其设置在所述表面上的金属栅极的层的基材。 在此，实施方式中，流体浴被包含在流体浴箱中。 另外，在本实施方式中，设置在基板上的栅极金属的层的厚度大约为所述栅电极的所希望的厚度所形成的相同。 接着，对本实施例应用跨越栅极金属的检查的层的表面均匀的电位做的聚合物粒子均匀地沉积到栅极金属的层。 在这样做时，本实施例的一致沉积在聚合物颗粒到栅金属的层。 另外，在本实施方式中，所述聚合物颗粒附着于通过范德华力和/或经由栅极金属层与各聚合物粒子之间的电荷差的栅极金属层的表面上。 在本实施方式中，所述聚合物颗粒沉积在栅极金属层的表面上每平方厘米1×10 8，大约1×10 -12至粒子的空间密度。 在本实施方式然后移除具有栅极金属的层中的底物和从流体浴沉积在其上的颗粒。

公开(公告)号：EP0995213A4

公开(公告)日：2001-04-04

申请号：EP98922233

申请日：1998-05-12

Applicant: CANDESCENT TECH CORP

Inventor： CHAKRAVORTY KISHORE K ,  ELIZONDO PHILIP J

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A method for forming a gate electrode comprises depositing a gate metal (604) over an insulating substrate (602) and etching openings in areas of the gate layer which are exposed through a hard mask. The layer of the gate metal (604) is deposited to a thickness approximately the same as the thickness desired for the gate electrode. Next, polymer particles (700) are deposited over the layer of gate metal. A hard mask layer (800) is then deposited over the polymer particles and the layer of gate metal. Then the polymer particles (700) and portions of the hard mask (800) which overlie the polymer particles are removed such that first regions of the gate metal (604) are exposed while second regions remain covered by the hard mask. After openings have been formed completely through the gate metal in the first regions, the remaining portions of the hard mask are removed.

Abstract translation: 一种形成栅电极的方法。 在一个实施例中，本发明包括在下面的衬底上沉积栅极金属，使得栅极金属层形成在下面的衬底之上。 在本发明中，栅极金属层被沉积​​成与栅电极所需厚度大致相同的厚度。 接下来，本发明将聚合物颗粒沉积在栅极金属层上。 然后将硬掩模层沉积在聚合物颗粒和栅极金属层上。 本发明除去聚合物颗粒和覆盖聚合物颗粒的硬掩模层的部分，使得栅极金属层的第一区域暴露，并且使得栅极金属层的第二区域保持被硬的覆盖 掩模层。 在去除步骤之后，本发明通过栅极金属层的第一区域蚀刻，使得开口完全穿过第一区域的栅极金属层形成。 在已经形成开口之后，去除覆盖在栅极金属层的第二区域上的硬掩模层的剩余部分。