公开(公告)号：HK1024513A1

公开(公告)日：2000-10-13

申请号：HK00103749

申请日：2000-06-21

Applicant: CANDESCENT TECH CORP

Inventor： PORTER JOHN D ,  KNALL N JOHAN ,  CHAKAROVA GABRIELA S ,  SPINDT CHRISTOPHER J

IPC: C25F3/02 ,  B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25D ,  B23H ,  H01J ,  B44C

Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.

公开(公告)号：HK1016744A1

公开(公告)日：1999-11-05

申请号：HK99101507

申请日：1999-04-12

Applicant: CANDESCENT TECH CORP

Inventor： SPINDT CHRISTOPHER J ,  CHAKAROVA GABRIELA S ,  NIKOLOVA MARIA S ,  SEARSON PETER C ,  HAVEN DUANE A ,  KNALL NILS JOHAN ,  MACAULAY JOHN C ,  BARTON ROGER W

IPC: B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  H01J

Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

公开(公告)号：EP0993513A4

公开(公告)日：2001-04-04

申请号：EP98931401

申请日：1998-06-29

Applicant: CANDESCENT TECH CORP

Inventor： KNALL N JOHAN ,  PORTER JOHN D ,  SPINDT CHRISTOPHER J ,  CHAKAROVA GABRIELA S ,  HAVEN DUANE A ,  MACAULAY JOHN C ,  BARTON ROGER W ,  NIKOLOVA MARIA S ,  SEARSON PETER C

IPC: C25F5/00 ,  C25F3/02 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  B23H3/00 ,  B44C1/22 ,  C25D5/48 ,  C25F3/00 ,  H01J1/02 ,  H01J1/62

CPC classification number: H01J9/025

Abstract: An impedance-assisted electrochemical procedure is employed for selectively removing certain material from a structure without significantly electrochemically attacking, and thus without significantly removing, certain other material of the same chemical type as the removed material.

Abstract translation: 阻抗辅助电化学过程被用于选择性地从结构中去除某些材料，而不显着电化学攻击，因而不除去显着相同的化学类型的，某些其他材料作为移除的材料。

公开(公告)号：EP0998597A4

公开(公告)日：2000-05-10

申请号：EP98906269

申请日：1998-02-10

Applicant: CANDESCENT TECH CORP

Inventor： PORTER JOHN D ,  CHAKAROVA GABRIELA S ,  KNALL N JOHAN ,  SPINDT CHRISTOPHER J

IPC: C25F3/02 ,  B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  B23H3/00 ,  B44C1/22 ,  C25D5/48 ,  H01J1/02 ,  H01J1/62

CPC classification number: H01J9/025

Abstract: A method for forming a field emitter structure in which a cavity (208) is formed into an insulating layer (206) overlaying a first electrically conductive layer (202). A second electrically conductive layer (210) with an opening (212) is formed above the cavity. Electron emissive material (214) is deposited directly onto the second electrically conductive layer without first depositing an underlying lift-off layer. Electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element (216) within the cavity. A first potential is imparted to the electron emissive element. A second open circuit potential is imparted to the closure layer of electron emissive material. The field emitter structure is exposed to an electrochemical etchant (220) wherein the electrochemical etchant etches electron emissive material which is biased at open circuit potential. Electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element.

Abstract translation: 一种形成场致发射结构的方法。 在一个实施例中，本发明产生了一种结构，其具有形成为覆盖在第一导电层上的绝缘层的空腔。 本发明还产生了第二导电层，其具有形成在绝缘层中的空腔上方的开口。 本实施例将电子发射材料层直接沉积到第二导电层上，而不首先沉积下面的剥离层，使得电子发射材料覆盖第二导电层中的开口并在腔内形成电子发射元件 。 本发明将第一电位施加到第一导电层，使得第一电位被赋予形成在空腔内的电子发射元件。 本发明还将第二电位施加到第二导电层，使得第二电位被赋予电子发射材料的封闭层。 在本实施例中，第二电位包括开路电位。 本发明然后将场发射体结构暴露于电化学蚀刻剂，其中电化学蚀刻剂蚀刻电子发射材料，该电子发射材料偏置于开路电位。 在这样做时，电子发射材料层从第二导电层上方去除，而不蚀刻形成在空腔内的电子发射元件。