公开(公告)号：EP1018131A4

公开(公告)日：2000-07-19

申请号：EP97926809

申请日：1997-06-05

Applicant: CANDESCENT TECH CORP

Inventor： HAVEN DUANE A ,  LUDWIG PAUL N ,  SPINDT CHRISTOPHER J ,  DOBKIN DANIEL M

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.