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公开(公告)号：WO0210846A3
公开(公告)日：2002-05-16
申请号：PCT/US0123722
申请日：2001-07-26
Applicant: CANDESCENT TECH CORP , SONY CORP
Inventor： LUDWIG PAUL N , FAHLEN THEODORE S , KANAGAWA SHINJI , SUN JENNIFER Y
IPC: G02F1/1339 , H01J9/26
CPC classification number: H01J9/261 , H01J2211/48 , H01J2329/867 , H01J2329/8675
Abstract: A flat-panel display is hermetically sealed by a process in which a first plate structure (30) is positioned generally opposite a second plate structure (32) such that sealing material (34) provided over the second plate structure lies between the plate structures. In a gravitational sealing technique, the first plate structure is positioned vertically below the second plate structure. The sealing material is heated so that it moves vertically downward under gravitational influence to meet the first plate structure and seal the plate structures together. In a global-heating gap-jumping technique, the plate structures and sealing material are globally heated to cause the sealing material to jump a gap between the sealing material and the first plate structure. When the first plate structure is positioned vertically above the second plate structure, the sealing material moves vertically upward to meet the first plate structure and close the gap.
Abstract translation: 平板显示器通过其中第一板结构（30）大致与第二板结构（32）相对放置的过程而被气密密封，使得设置在第二板结构上的密封材料（34）位于板结构之间。 在重力密封技术中，第一板结构垂直定位在第二板结构下方。 密封材料被加热以使其在重力影响下垂直向下移动以与第一板结构相遇并将板结构密封在一起。 在全局加热间隙跳跃技术中，板结构和密封材料被全面加热以使密封材料跳过密封材料和第一板结构之间的间隙。 当第一板结构垂直定位在第二板结构上方时，密封材料垂直向上移动以接合第一板结构并封闭间隙。
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公开(公告)号：AU8085101A
公开(公告)日：2002-02-13
申请号：AU8085101
申请日：2001-07-26
Applicant: CANDESCENT TECH CORP , SONY CORP
Inventor： LUDWIG PAUL N , FAHLEN THEODORE S , KANAGAWA SHINJI , SUN JENNIFER Y
IPC: G02F1/1339 , H01J9/26
Abstract: A flat-panel display is hermetically sealed by a process in which a first plate structure (30) is positioned generally opposite a second plate structure (32) such that sealing material (34) provided over the second plate structure lies between the plate structures. In a gravitational sealing technique, the first plate structure is positioned vertically below the second plate structure. The sealing material is heated so that it moves vertically downward under gravitational influence to meet the first plate structure and seal the plate structures together. In a global-heating gap-jumping technique, the plate structures and sealing material are globally heated to cause the sealing material to jump a gap between the sealing material and the first plate structure. When the first plate structure is positioned vertically above the second plate structure, the sealing material moves vertically upward to meet the first plate structure and close the gap.
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公开(公告)号：AU2934401A
公开(公告)日：2001-08-07
申请号：AU2934401
申请日：2001-01-08
Applicant: CANDESCENT TECH CORP
Inventor： KRUPETSKY DMITRIY , SCHMID ANTHONY P , LUDWIG PAUL N
Abstract: A tuned sealing material and a method for attaching a first surface to a second surface using the tuned sealing material are disclosed. In one embodiment, the present invention applies a tuned sealing material between a first surface and a second surface. In this embodiment, the tuned sealing material is comprised of a combination of a filler material and a glass material. Furthermore, in this embodiment, the filler material is tuned to absorb electromagnetic radiation of a selected frequency. Next, in the present embodiment, the tuned sealing material is subjected to the electromagnetic radiation of the selected frequency. As a result of tuning the filler material, the tuned sealing material absorbs the electromagnetic radiation of the selected frequency. After absorbing the electromagnetic radiation of the desired frequency, the tuned sealing material is used to attach the first surface and the second surface.
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公开(公告)号：EP1018131A4
公开(公告)日：2000-07-19
申请号：EP97926809
申请日：1997-06-05
Applicant: CANDESCENT TECH CORP
Inventor： HAVEN DUANE A , LUDWIG PAUL N , SPINDT CHRISTOPHER J , DOBKIN DANIEL M
CPC classification number: H01J9/025 , H01J2329/00
Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.
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