Abstract:
A structure and method for forming a column electrode for a field emission display device wherein the column electrode (702) is disposed beneath the field emitters and the row electrode. In one embodiment, the present invention comprises depositing a resistor layer (706) over portions of a column electrode (702). Next, an inter-metal dielectric layer (708) is deposited over the column electrode. In the present embodiment, the inter-metal dielectric layer (708) is deposited over portions of the resistor layer (706) and over pad areas (704a, 704b) of the column electrode (702). After the deposition of the inter-metal dielectric layer (708), the column electrode (702) is subjected to an anodization process such that the exposed regions of the column electrode (702) are anodized. In so doing, the present invention provides a column electrode structure (702) which is resistant to column to row electrode shorts and which is protected from subsequent processing steps.
Abstract:
Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.
Abstract:
A cathode structure (200, 203, 204) suitable for a flat panel display is provided with coated emitters (229, 239, 230). The emitters are formed with material, typically nickel, capable of growing to a high aspect ration. These emitters are then coated with carbon containing material (240, 241) for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor (301, 305, 313, and 315) to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.
Abstract:
Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.
Abstract:
Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.