公开(公告)号：WO1997047021A1

公开(公告)日：1997-12-11

申请号：PCT/US1997009198

申请日：1997-06-05

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  LUDWIG, Paul, N. ,  HAVEN, Duane, A. ,  MACAULAY, John, M. ,  SPINDT, Christopher, J. ,  CLEEVES, James, M. ,  KNALL, N., Johan

IPC: H01J09/02

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.

Abstract translation: 具有下部非绝缘发射极区域（42），上覆绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的电子发射体通过其中颗粒 （46）分布在以下层之一上：绝缘层，栅极层，设置在栅极层上的初级层（50A，62A或72），设置在主层上的另一层（74），或 图案转印层（182）。 这些颗粒用于通过栅极层限定栅极开口（54,66,80,122或186/188）。 然后，通过绝缘层形成电介质开口（56,58,80,114,128,144或154），各种门开口被不同地使用。 在电介质开口中形成电子发射元件，其可以例如成形为锥体（58A或70A）或类似的细丝（106B，116B，130A，146A或156B）。

公开(公告)号：WO2003091976A1

公开(公告)日：2003-11-06

申请号：PCT/US2003/011841

申请日：2003-04-18

Applicant: CANDESCENT TECHNOLOGIES CORPORATION ,  SONY CORPORATION

Inventor： HANSEN, Ronald, L. ,  DUNPHY, James, C. ,  SPINDT, Christopher, J. ,  CLEEVES, James, M. ,  TRUPPA, Jerome, M. ,  FINK, Gregory, M. ,  IGUCHI, Yukinobu

IPC: G09G3/22

CPC classification number: G09G3/22 ,  G09G3/2011 ,  G09G3/2014 ,  G09G5/02 ,  G09G2310/06 ,  G09G2320/0285 ,  G09G2320/029 ,  Y10S345/904

Abstract: A field emission display (110) having a correction system (105) with a correction coefficient derived from emission current is presented. Within one embodiment, a field emission display (110) with an anode (25) at the faceplate and a focus structure (90). The anode potential is held at ground while the focus structure (90) potential is held between, but is not limited to, 40 and 50 volts. The current flowing to the focus structure (90) is measured and used as the basis for the correction coefficient for the field emission display (110).

Abstract translation: 具有具有从发射电流导出的校正系数的校正系统（105）的场致发射显示器（110）。 在一个实施例中，在面板上具有阳极（25）的场发射显示器（110）和聚焦结构（90）。 阳极电位保持在地面，同时聚焦结构（90）电位保持在但不限于40和50伏之间。 流过聚焦结构（90）的电流被测量并用作场致发射显示器（110）的校正系数的基础。

公开(公告)号：EP0922293A1

公开(公告)日：1999-06-16

申请号：EP97927842.0

申请日：1997-06-05

Applicant: Candescent Technologies Corporation

Inventor： LUDWIG, Paul, N. ,  HAVEN, Duane, A. ,  MACAULAY, John, M. ,  SPINDT, Christopher, J. ,  CLEEVES, James, M. ,  KNALL, N., Johan

IPC: H01J1 ,  H01J9

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.

公开(公告)号：EP1038303A1

公开(公告)日：2000-09-27

申请号：EP98956230.1

申请日：1998-10-27

Applicant: Candescent Technologies Corporation

Inventor： CLEEVES, James, M. ,  SPINDT, Christopher, J. ,  BARTON, Roger, W. ,  CHAKRAVORTY, Kishore, K. ,  LEARN, Arthur, J. ,  OBERG, Stephanie, J.

IPC: H01J1/30

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J29/467 ,  H01J2201/319 ,  H01J2329/00

Abstract: An electron-emitting device contains a vertical emitter resistor patterned into multiple laterally separated sections (34, 34V, 46, or 46V) situated between the electron-emissive elements (40), on one hand, and emitter electrodes (32), on the other hand. Sections of the resistor are spaced apart along each emitter electrode. The resistor can be formed in a manner self aligned to control electrodes (38 or 52A/58B) of the device or with a separate resistor mask.