公开(公告)号：JPH0531986B2

公开(公告)日：1993-05-13

申请号：JP1198786

申请日：1986-01-24

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  ISOBE YOSHINORI ,  SAIGA TOSHIHIRO ,  NAKAGAWA KATSUMI

IPC: H01L27/146 ,  H01L27/14 ,  H04N1/028

公开(公告)号：JPH0530279A

公开(公告)日：1993-02-05

申请号：JP31137591

申请日：1991-10-31

Applicant: CANON KK

Inventor： KOBAYASHI ISAO ,  SAIGA TOSHIHIRO ,  UMIBE NORIYUKI ,  ENDO TADAO

IPC: H01L27/146 ,  H04N1/028 ,  H04N5/376

Abstract: PURPOSE:To improve the accuracy of picture reading and the operating speed as the entire device by discharging the charge as optical information from a charge storage capacitor via a photoelectric conversion element acting like a switching element. CONSTITUTION:Each of elements D1-D9 being photo transistors(TRs) acts like a sensor (E1-E9) comprising a photoconductive layer and a switching TR (ST1-ST9). When a light is made incident in the photosensors E1-E9, a charge is discharged from capacitors C1-C9 in response to the intensity. When a high level is outputted from the parallel terminal of a shift register 106 and the switching TR T1-T3 are turned on, the remaining charge discharged to the capacitors C1-C9 in response to the light intensity is transferred to the capacitors C10-C12. Succeedingly, a high level outputted from the shift register 107 is shifted and the switching TRs T10-T12 are sequentially turned on and the reduction of the read signal is used for optical information.

公开(公告)号：JPH04174563A

公开(公告)日：1992-06-22

申请号：JP29992090

申请日：1990-11-07

Applicant: CANON KK

Inventor： YAMANOBE MASATO ,  KOBAYASHI ISAO ,  SAIGA TOSHIHIRO ,  ISHII TAKAYUKI ,  TAKEDA SHINICHI

IPC: H01L21/314 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To make a characteristic and a distribution uniform inside a large-area substrate by a method wherein a protective layer covering a thin-film semiconductor layer is constituted of two thin-film insulating layers composed of mutually different inorganic substances. CONSTITUTION:For a glass substrate G, Cr is used as a gate electrode 1. Then, a gate insulating film 2, a thin-film semiconductor layer 3 and protective films 10, 11 are deposited continuously. The protective films 10, 11 covering the semiconductor layer 2 are constituted of two thin-film insulating layers composed of mutually different inorganic substances. It is desirable that the thin-film semiconductor layer is composed of amorphous hydrogenated silicon and that the first protective film is composed of amorphous silicon nitride. Then, after the protective film 10 has been formed and when an element is formed, the channel upper part of the semiconductor layer 3 is not etched, an electric characteristic is not deteriorated and a uniform distribution is obtained. The composition of the protective film 10 is selected without considering the stability against surroundings and by controlling only the state at the interface between the semiconductor layer 3 and the protective film 10. As a result, a uniform and desired initial characteristic can be obtained even inside the large-area substrate G. Since the protective film 11 is laminated, the stability against surroundings can be ensured.

公开(公告)号：JPH0394571A

公开(公告)日：1991-04-19

申请号：JP23029889

申请日：1989-09-07

Applicant: CANON KK

Inventor： ENDO TADAO ,  UMIBE NORIYUKI ,  SAIGA TOSHIHIRO ,  KOBAYASHI ISAO ,  TOMOTA KOJI

IPC: H04N1/028 ,  H01L27/146

Abstract: PURPOSE:To form a signal with high accuracy able to be decoded into an excellent picture by receiving a correction signal outputted from a voltage division means and a read signal obtained from a read sensor so as to apply subtraction processing and eliminating a stray light component. CONSTITUTION:A reflection light 10 from a protection layer surface radiates a read sensor 5 in addition to a light of an original face 9 and the light is processed by a read sensor output processing circuit 11. On the other hand, a reflecting light 10 from the protection layer surface radiates to a correction sensor 6 and the light is processed by a correction sensor processing circuit 12. The output of the correction sensor is subjected to reduction of 1/K (K is a value depending on stray light quantity) by a voltage division circuit 17 and a subtraction circuit 13 applies subtraction processing with the read sensor output. Where, a sensor output when reading a white original is W, the sensor output M by stray light is expressed as M=(1/K)W. Thus, the subtraction output characteristic to the original face reflectance independently of the stray light is obtained by subtracting the output (1/K)W by stray light from the sensor output.

公开(公告)号：JPH0394570A

公开(公告)日：1991-04-19

申请号：JP23029689

申请日：1989-09-07

Applicant: CANON KK

Inventor： ENDO TADAO ,  UMIBE NORIYUKI ,  SAIGA TOSHIHIRO ,  KOBAYASHI ISAO ,  TOMOTA KOJI

IPC: H04N1/028 ,  H01L27/146

Abstract: PURPOSE:To eliminate stray light component other than original information due to optical action such as reflection or diffusion by providing a means inputting a correction signal obtained from a correction sensor and a read signal obtained from a read sensor, applying subtraction processing and outputting the corrected read signal. CONSTITUTION:An incident light passing through windows 14, 15 passes through a transparent protection layer 4 and is directed in the direction of an original 8 and a black color shield plate 16, part of the incident light is reflected in the surface of the transparent protection layer 4 and directed in the direction of respective sensors. An original face reflecting light 9 and a protection layer surface reflecting light 10 radiate in a read sensor 5 and outputs are processed by a read sensor output processing circuit 11. On the other hand, only stray light radiates to a correction sensor 6 and is outputted to a correction sensor processing circuit 12. Outputs of respective processing circuits are subjected to subtraction processing by a subtraction circuit 13. Thus, the output by the stray light component is eliminated and only original information is obtained as an output with high accuracy.

公开(公告)号：JPH02226764A

公开(公告)日：1990-09-10

申请号：JP4514489

申请日：1989-02-28

Applicant: CANON KK

Inventor： KOBAYASHI ISAO ,  SAIGA TOSHIHIRO ,  UMIBE NORIYUKI ,  ENDO TADAO ,  SHIMADA TETSUYA

IPC: H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374

Abstract: PURPOSE:To prevent the generation of crosstalk between each of the output signals of wirings by constituting a matrix wiring and a charge storing means of a laminated structure composed of a first conducting layer, a first insulating layer, a second conducting layer, a second insulating layer, a semiconductor layer, and a third conducting layer, and forming each layer of wirings and each layer of storing means by using the same layers. CONSTITUTION:On a substrate 8, the following are formed; a first conducting layer 22 of Al, Cr and the like, a first insulating layer 23 of SiN and the like, a second conducting layer 24 of Al, Cr and the like, a second insulating layer 25 of SiN and the like, a semiconductor layer 26 of a-Si:H, an ohmic contact layer 27 of a -Si:H and a-Si:H, a third conducting layer 28 of Al, Cr and the like, and a protecting layer 29 of polyimide and the like. By constituting a device in this manner, and making the conductivity of the semiconductor layer 26 change with a reflected light from a manuscript surface, a current flowing between wirings 30 and 31 of upper layer electrodes facing in the form of a comb is made to be changed. A storing capacitor part 2 is constituted of the following; a first electrode wiring 40, the insulating layer 23 thereon, an electrode wiring 33 arranged on the insulating layer 23, the insulating layer 25 arranged on the wiring 33, and a semiconductor layer 26.

公开(公告)号：JPH02219268A

公开(公告)日：1990-08-31

申请号：JP3923889

申请日：1989-02-21

Applicant: CANON KK

Inventor： ENDO TADAO ,  UMIBE NORIYUKI ,  SAIGA TOSHIHIRO ,  KOBAYASHI ISAO ,  SHIMADA TETSUYA

IPC: H01L27/146

Abstract: PURPOSE:To reduce crosstalk by making widths of individual signal lines and common signal lines of matrix signal wiring narrower than those of other sections of the lines at intersections where the individual signal lines and common signal lines intersect each other. CONSTITUTION:A matrix wiring section has such a structure that individual signal lines 25 and common signal lines 26 are arranged in a matrix-like form through insulating layers 3, semiconductor layers 4, and n layers 5 and ohmic junctions are formed by means of contact sections 29. At intersections 28 where the lines 25 and lines 26 intersect each other, the widths of the lines 25 and 26 are made narrower than those of the other sections of the lines 25 and 26. As a result, influences of the capacity coupling between the lines 25 and 26 can be reduced and crosstalk between the signal lines 25 and 26 can be prevented.

公开(公告)号：JPS6392153A

公开(公告)日：1988-04-22

申请号：JP23706786

申请日：1986-10-07

Applicant: CANON KK

Inventor： ITABASHI SATORU ,  SAIGA TOSHIHIRO ,  GOFUKU IHACHIROU

IPC: H01L27/146 ,  H01L27/14 ,  H04N1/028

Abstract: PURPOSE:To eliminate the need for a correcting circuit and to reduce the cost of equipment by applying a bias voltage which is different according to the array position of a photosensor to a light shield layer. CONSTITUTION:An original P is irradiated with light L which is incident through the incidence window 19 of a transparent substrate 11 and its reflected light is received by a photosensor part 108 to read out a read signal through electrode wiring. Namely, when the reflected light L is incident on the surface of a semiconductor layer 14 through a photodetection part 118 while a high-potential driving voltage based upon the potential of a main electrode 116 is applied to a main electrode 117, carriers increase and then the resistance decreases, so that the variation is read as image information. At this time, the bias voltage which is different according to the array position of the photosensor is applied to the light shield layer 112 and the distribution of the sensor output is smoothed when the image is read, thereby eliminating the need for the correcting circuit.

公开(公告)号：JPS6313570A

公开(公告)日：1988-01-20

申请号：JP15626286

申请日：1986-07-04

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  ABE NAOTO ,  SAKAMOTO EIJI ,  SAIGA TOSHIHIRO

IPC: H04N1/19 ,  H04N1/028 ,  H04N1/193 ,  H04N1/40 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/369 ,  H04N5/374

Abstract: PURPOSE:To change an accumulating time without changing a reading period by providing an idle reading section between reading sections to execute respective reading actions of a charge accumulating means and executing a resetting action at the desired section of these idle reading sections. CONSTITUTION:In a charge accumulating type line sensor, a line reading period TG is divided, and reading sections r1-rN and idle reading sections d1-dN are alternately assigned. When a gate selecting pulse VG1 in the reading section r1 is added to a driving source G1, a switch SWt1 for transferring is turned on, and a light output accumulated at a capacitor C1 is read. When a gate selecting pulse VG2 in the idle reading section d2 is added to a driving line G2, a switch SWr1 for discharging is turned on, the capacitor C1 is reset and the accumulating action of the light electric current of a photosensor S1 is started. By adding a gate selecting pulse to the desired section in the idle reading section, an accumulating time Ts can be optionally changed.

公开(公告)号：JPS62171373A

公开(公告)日：1987-07-28

申请号：JP1198886

申请日：1986-01-24

Applicant: CANON KK

Inventor： ISOBE YOSHINORI ,  SAIGA TOSHIHIRO ,  NAKAGAWA KATSUMI ,  HATANAKA KATSUNORI

IPC: H01L27/146 ,  H01L27/14 ,  H04N1/028 ,  H04N1/04 ,  H04N1/19

Abstract: PURPOSE:To reduce the variation of a signal due to transfer by dividing switch elements for transfer into blocks as many as their gate lines and wiring the same gate lines in order from the head of each block. CONSTITUTION:A matrix part 4 switches the gates of a switch element part 3 and when the number of gate lines is (m), the switch element part 3 is divided into (n) blocks. Further, the bits of each block are denoted as the 1st, the 2nd - the (m)th bit and bits having the same numbers are connected by common gate lines. The matrix part 4 is connected on a drain side between a capacitor part 2 and the switch element part 3 and a switch element gate driver 9 is connected to the matrix part 4. The gate lines of the switch elements are used to form the matrix on the drain side without crossing signal lines, so crosstalk is reduced.