Abstract:
A probe measurement system comprises a probe with a linear array of probe tips enabling a single probe to be used when probing a test structure with a differential signal.
Abstract:
A plurality of calibration structures facilitate calibration of a probing system that includes a differential signal probe having a linear array of probe tips.
Abstract:
A test structure for characterizing integrated circuits on a wafer includes a differential cell outputting a differential mode signal in response to a differential mode input signal. The probe pads of the test structure are arrayed linearly enabling placement of the test structure in a saw street between dies.
Abstract:
Resilient electrical interposers that may be utilized to form a plurality of electrical connections between a first device and a second device, as well as systems that may utilize the resilient electrical interposers and methods of use and/or fabrication thereof. The resilient electrical interposers may include a resilient dielectric body with a plurality of electrical conduits contained therein. The plurality of electrical conduits may be configured to provide a plurality of electrical connections between a first surface of the electrical interposer and/or the resilient dielectric body and a second, opposed, surface of the electrical interposer and/or the resilient dielectric body. The systems and methods disclosed herein may provide for improved vertical compliance, improved contact force control, and/or improved dimensional stability of the resilient electrical interposers.
Abstract:
A probe suitable for probing a semiconductor wafer that includes an active circuit (16). The probe may include a flexible interconnection (14) between the active circuit (16) and a support structure (10). The probe may impose a relatively low capacitance on the device under test.
Abstract:
A probe measurement system (40-43, 90, 80, 85, 90, 94) for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.
Abstract:
The probe has active circuits (410, 412) with resistive units, each of which is supported by a substrate. Elongate probing units (414, 416) are interconnected to the respective active circuits. The active circuits are interconnected to a substrate by a respective pair of flexible interconnects (432, 434). The active circuits are also interconnected to a respective set of signal paths (420, 422).
Abstract:
The probe has active circuits (410, 412) with resistive units, each of which is supported by a substrate. Elongate probing units (414, 416) are interconnected to the respective active circuits. The active circuits are interconnected to a substrate by a respective pair of flexible interconnects (432, 434). The active circuits are also interconnected to a respective set of signal paths (420, 422).
Abstract:
A probe suitable for probing a semiconductor wafer that includes an active circuit (16). The probe may include a flexible interconnection (14) between the active circuit (16) and a support structure (10). The probe may impose a relatively low capacitance on the device under test.
Abstract:
A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.