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公开(公告)号:US20230135424A1
公开(公告)日:2023-05-04
申请号:US17896171
申请日:2022-08-26
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor: Shrane-Ning Jenq , Wen-Cheng Hsu , Chen-Yu Wang , Chih-Ming Kuo , Chwan-Tyaw Chen , Lung-Hua Ho
IPC: H01L21/48 , H01L23/498 , H01L21/311 , H01L21/3213 , C23C18/54 , C23C28/02 , C25D7/12
Abstract: A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.
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公开(公告)号:US12224183B2
公开(公告)日:2025-02-11
申请号:US17896171
申请日:2022-08-26
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor: Shrane-Ning Jenq , Wen-Cheng Hsu , Chen-Yu Wang , Chih-Ming Kuo , Chwan-Tyaw Chen , Lung-Hua Ho
IPC: H01L21/48 , C23C18/54 , C23C28/02 , C25D7/12 , H01L21/311 , H01L21/3213 , H01L23/498 , H01L23/00
Abstract: A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.
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公开(公告)号:US20230187378A1
公开(公告)日:2023-06-15
申请号:US17988846
申请日:2022-11-17
Applicant: CHIPBOND TECHNOLOGY CORPORATION
Inventor: Shrane-Ning Jenq , Chen-Yu Wang , Chin-Tang Hsieh , Shu-Yeh Chang , Lung-Hua Ho
IPC: H01L23/552 , H01L23/31 , H01L23/498 , H01L21/56
CPC classification number: H01L23/552 , H01L23/3121 , H01L23/49811 , H01L21/561
Abstract: In a method of manufacturing a semiconductor package, at least one conductive wire is formed on a substrate in a wire bonding process, a ball end of the conductive wire is located above the substrate, a molding material is provided to cover the conductive wire except the ball end, and an EMI shielding layer is formed on the molding material to connect to the ball end. Owing to the ball end is exposed on the molding material, connection area of the EMI shielding layer to the conductive wire is increased to improve connection strength and reliability between the EMI shielding layer and the conductive wire.
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