公开(公告)号：WO2004008816A3

公开(公告)日：2005-03-10

申请号：PCT/FR0302157

申请日：2003-07-10

Applicant: CIT ALCATEL ,  PUECH MICHEL

Inventor： PUECH MICHEL

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321

Abstract: The invention concerns a method and a system wherein the etching process is carried out in a reaction chamber (1) by acting on a substrate (16) polarized by a polarization generator (15) a plasma generated by a plasma source (4) contained in a sealed wall (5) made of dielectric material enclosed with an inductive coupling antenna (6) fed by a radio frequency generator (7). Control means (13) monitor the solenoid valves (12a, 12b, 12c) and the radio frequency generator (7), so as to produce a preparatory step which consists in gradually establishing plasma excitation power, a step which consists in injecting into the reaction chamber (1) a neutral gas such as argon or nitrogen, and in gradually establishing the power delivered by the radio frequency generator (7) until a nominal power is achieved, thereby avoiding heat shocks liable to destroy the sealed wall (5) of dielectric material, thus enabling use of plasma excitation power levels higher than 3000 watts.

Abstract translation: 本发明涉及一种方法和系统，其中通过作用在由偏振发生器（15）偏振的基板（16）上，通过等离子体源（4）产生的等离子体作用在反应室（1）中进行蚀刻工艺， 由电磁耦合天线（6）围绕的由介电材料制成的密封壁（5），所述感应耦合天线（6）由射频发生器（7）馈送。 控制装置（13）监视电磁阀（12a，12b，12c）和射频发生器（7），从而产生一个准备步骤，该步骤包括逐渐建立等离子体激发功率，包括注入反应 （1）中性气体，例如氩气或氮气，并且逐渐建立由射频发生器（7）输送的功率，直到达到额定功率，从而避免易于破坏电介质密封壁（5）的热冲击 材料，从而能够使用高于3000瓦的等离子体激发功率。

公开(公告)号：JP2002339864A

公开(公告)日：2002-11-27

申请号：JP2002073658

申请日：2002-03-18

Applicant: CIT ALCATEL

Inventor： PUECH MICHEL

IPC: F04B37/14 ,  F04B37/16 ,  F04B41/06 ,  F04B45/04 ,  F04C18/12 ,  F04C23/00 ,  F04C25/02 ,  F04C29/12 ,  F04C29/00

Abstract: PROBLEM TO BE SOLVED: To provide a new vacuum pumping system structure avoiding destruction of a dry primary pump when pumping low thermal conductivity gas. SOLUTION: In the vacuum pumping system, the Roots or claw multistage dry primary pump exhausts gas into an outlet stage including an additional piston or a membrane pump 6 connected in parallel with an auxiliary exhaust pipe 7 including a check valve 11. The outlet stage extensively reduces heating of the primary pump 1, and by the vacuum pumping system gas having low thermal conductivity such as argon or a xenon can be efficiently pumped without damage.

公开(公告)号：JP2001127049A

公开(公告)日：2001-05-11

申请号：JP2000243842

申请日：2000-08-11

Applicant: CIT ALCATEL

Inventor： PUECH MICHEL

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a plasma vacuum substrate treatment process and a system that can quickly change the flow of active gases in a vacuum enclosure. SOLUTION: In a process for treating a substrate 16 arranged in a vacuum enclosure 1, the present invention provides for compensating any variation of the active gas supply flowrate via active gas supply pipe 4 by injecting a complementary flowrate of control gas into an area 25 close to controlled gas suction means 3. This prevents a pressure control system and an impedance matching system from being unable to respond to variations in the input active gas flowrate in about one second.

公开(公告)号：WO2004008477A3

公开(公告)日：2004-04-08

申请号：PCT/FR0302156

申请日：2003-07-10

Applicant: CIT ALCATEL ,  PUECH MICHEL

Inventor： PUECH MICHEL

IPC: H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32522

Abstract: The invention concerns a reactor wherein the reaction chamber (1) is delimited by a sealed wall (2) protected by a heating jacket (14). The heating jacket (14) is brought to a temperature higher than the polymer condensation temperature generated during the passivation steps of an alternating plasma etching process, so as to prevent polymer deposition on the sealed wall (2) of the reaction chamber (1) and on the heating jacket itself (14), thereby maintaining a constant etching speed.

Abstract translation: 本发明涉及一种反应器，其中反应室（1）由被加热套（14）保护的密封壁（2）限定。 加热套（14）的温度高于交替等离子体蚀刻工艺的钝化步骤期间产生的聚合物冷凝温度，以防止聚合物沉积在反应室（1）的密封壁（2）上，并且 在加热套本身（14）上，从而保持恒定的蚀刻速度。

公开(公告)号：WO2004008816A8

公开(公告)日：2004-05-27

申请号：PCT/FR0302157

申请日：2003-07-10

Applicant: CIT ALCATEL ,  PUECH MICHEL

Inventor： PUECH MICHEL

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321

Abstract: The invention concerns a method and a system wherein the etching process is carried out in a reaction chamber (1) by acting on a substrate (16) polarized by a polarization generator (15) a plasma generated by a plasma source (4) contained in a sealed wall (5) made of dielectric material enclosed with an inductive coupling antenna (6) fed by a radio frequency generator (7). Control means (13) monitor the solenoid valves (12a, 12b, 12c) and the radio frequency generator (7), so as to produce a preparatory step which consists in gradually establishing plasma excitation power, a step which consists in injecting into the reaction chamber (1) a neutral gas such as argon or nitrogen, and in gradually establishing the power delivered by the radio frequency generator (7) until a nominal power is achieved, thereby avoiding heat shocks liable to destroy the sealed wall (5) of dielectric material, thus enabling use of plasma excitation power levels higher than 3000 watts.

Abstract translation: 本发明涉及一种方法和系统，其中通过作用在由极化发生器（15）极化的基板（16）上的反应室（1）中执行蚀刻过程，等离子体源（4）产生的等离子体 一个由电介质材料制成的密封壁（5），该密封壁由一个由射频发生器（7）馈电的感应耦合天线（6）封闭。 控制装置（13）监控电磁阀（12a，12b，12c）和射频发生器（7），以便产生一个准备步骤，该步骤包括逐渐建立等离子体激励功率，一个包括注入反应 （1）提供一种中性气体，例如氩气或氮气，并逐渐建立由射频发生器（7）输送的功率，直到达到额定功率，从而避免热冲击，这种热冲击很可能破坏电介质密封壁（5） 材料，从而能够使用高于3000瓦的等离子体激发功率水平。

公开(公告)号：JP2003092288A

公开(公告)日：2003-03-28

申请号：JP2002153359

申请日：2002-05-28

Applicant: CIT ALCATEL

Inventor： GARABEDIAN PATRICK ,  PAGNOD ROSSIAUX PHILIPPE ,  PUECH MICHEL

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide an effective shield in an ICP-RIE reactor. SOLUTION: A separate shield arrangement 20 is included which is fixed in a detachable way on a substrate holder 3 above a clamping means 10 to mask the clamping means with respect to reactive ion flux. The shield arrangement 20 made of a single ring can be mounted on the substrate holder 3 directly upon the clamping means or can also be mounted directly above it and separated by a smaller distance from the clamping means 10. The shield arrangement 70 can also be made of at least two rings 22. The material of the shield arrangement 20 can be covered with a film of dielectric material and electrically connected to the ground 23 through the substrate holder 3.

公开(公告)号：JP2000323454A

公开(公告)日：2000-11-24

申请号：JP2000055248

申请日：2000-03-01

Applicant: CIT ALCATEL

Inventor： PANDUMSOPORN TAMARAK ,  YU KEVIN ,  FELDBAUM MICHAEL ,  PUECH MICHEL

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To enable etching with a high aspect ratio and a high selectivity by stimulating a mixed gas composed of an etching gas and a passivation gas with a low-power electromagnetic radiation, applying a high bias voltage, stimulating the mixed gas with a high-power electromagnetic radiation, and applying a low bias voltage to a substrate. SOLUTION: A mixed gas composed of an etching gas and a passivation gas is fed in a chamber 10, a comparatively low r-f power is applied from a power source 30 to form a plasma, and a bias voltage is given from an oscillator 18 on a substrate to form a comparatively high electric field. After 10 to 100 sec for example, the power source 30 is switched to a comparatively high power to provide a high energy stimulated state of a plasma, the bias potential generated by the oscillator 18 on the substrate lowers to a comparatively low level, a protective polymer layer 46 of a specified thickness is formed on the walls of trenches after 0.5 to 3 sec for example, and the polymer layer in the trench bottoms is stripped by the impact of anisotropic ions accelerated by the high bias potential during etching.

公开(公告)号：FR2878913A1

公开(公告)日：2006-06-09

申请号：FR0452853

申请日：2004-12-03

Applicant: CIT ALCATEL

Inventor： DESBIOLLES JEAN PIERRE ,  PUECH MICHEL

IPC: F04D27/00 ,  F04B37/14 ,  F04D19/04 ,  F04D25/16 ,  H01L21/00 ,  H01L21/205

Abstract: Un dispositif pour établir et contrôler un mélange gazeux à faible pression dans une enceinte à vide (8) comprend au moins une pompe secondaire (9) de type moléculaire, turbomoléculaire ou hybride, suivie d'au moins une pompe primaire (10), avec des premiers moyens de contrôle et d'ajustement (22) tels qu'une vanne de régulation (24) pour contrôler et ajuster la pression gazeuse totale du mélange gazeux dans l'enceinte à vide (8) en fonction d'une consigne de pression totale (27). Le dispositif comprend en outre des seconds moyens de contrôle et d'ajustement (28) tels qu'une seconde vanne de régulation (29a) en aval de la pompe secondaire (9). La seconde vanne de régulation (29a) est pilotée en fonction d'une consigne de pression de refoulement (32) pour modifier la pression de refoulement de la pompe secondaire (9) et adapter ainsi sa capacité de pompage sélectif. Cela permet d'ajuster les proportions des gaz du mélange gazeux dans l'enceinte à vide, indépendamment de la pression totale commandée par la première vanne de régulation (24).

公开(公告)号：FR2875054A1

公开(公告)日：2006-03-10

申请号：FR0451992

申请日：2004-09-08

Applicant: CIT ALCATEL

Inventor： PUECH MICHEL ,  GUICHENAL XAVIER

IPC: H01L21/673 ,  H01L21/683 ,  H01L23/36

Abstract: La présente invention a pour objet un dispositif destiné à supporter un substrat semi-conducteur (4), comprenant un porte-échantillon (1) solidaire de la chambre de procédé comportant un système de refroidissement (2, 3) des moyens de fixation dudit substrat (4) sur ledit porte-échantillon (1), et des moyens de liaison électrique (11) avec un élément (5a) intermédiaire mobile rigide disposé entre le porte-échantillon (1) et le substrat (4). L'élément (Sa) comporte (a) une base (7) constituée d'un premier matériau ayant une conductivité thermique supérieure à celle du substrat (4), (b) une première couche (8) recouvrant la base (7) constituée d'un deuxième matériau ayant une rigidité diélectrique élevée, (c) deux électrodes (9a, 9b) disposées sur la première couche (8), (d) une deuxième couche (12), recouvrant la première couche (8) et les électrodes (9a, 9b), constituée d'un troisième matériau ayant une rigidité diélectrique élevée.

公开(公告)号：FR2783883A1

公开(公告)日：2000-03-31

申请号：FR9811296

申请日：1998-09-10

Applicant: CIT ALCATEL

Inventor： PUECH MICHEL

IPC: F04D19/04 ,  F04D29/70