公开(公告)号：FR2864457B1

公开(公告)日：2006-12-08

申请号：FR0351239

申请日：2003-12-31

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA

Inventor： ABBADIE ALEXANDRA ,  BESSON PASCAL ,  SEMERIA MARIE NOELLE

IPC: B08B3/08 ,  H01L21/304 ,  B08B3/12 ,  C11D7/08 ,  C11D11/00 ,  C23G1/02 ,  C30B33/00 ,  H01L21/306

Abstract: Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises bringing surface into contact with hydrofluoric acid solution; and rinsing surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes. Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises: bringing the surface into contact with an hydrofluoric acid (HF) solution with an HF concentration of 0.2-2 (preferably 1) vol.%, in deionized water, for =10 (preferably 4) minutes, the pH of the solution being maintained at 1-2, preferably 1, throughout the duration of the contacting; rinsing the surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes, the pH being maintained at =5 (preferably 3-5), throughout step (2); optionally repeating step (1), once or twice, while optionally reducing the contacting time, which is then preferably 30 seconds and 2 minutes, (preferably 1 minute to 30 seconds); optionally repeating step (2), once or twice; and drying the surface.

公开(公告)号：FR2864457A1

公开(公告)日：2005-07-01

申请号：FR0351239

申请日：2003-12-31

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA

Inventor： ABBADIE ALEXANDRA ,  BESSON PASCAL ,  SEMERIA MARIE NOELLE

IPC: H01L21/304 ,  B08B3/08 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306 ,  B08B3/12 ,  C30B33/00 ,  C23G1/02

Abstract: Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises bringing surface into contact with hydrofluoric acid solution; and rinsing surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes. Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises: bringing the surface into contact with an hydrofluoric acid (HF) solution with an HF concentration of 0.2-2 (preferably 1) vol.%, in deionized water, for =10 (preferably 4) minutes, the pH of the solution being maintained at 1-2, preferably 1, throughout the duration of the contacting; rinsing the surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes, the pH being maintained at =5 (preferably 3-5), throughout step (2); optionally repeating step (1), once or twice, while optionally reducing the contacting time, which is then preferably 30 seconds and 2 minutes, (preferably 1 minute to 30 seconds); optionally repeating step (2), once or twice; and drying the surface.

公开(公告)号：DE602004016451D1

公开(公告)日：2008-10-23

申请号：DE602004016451

申请日：2004-12-30

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ABBADIE ALEXANDRA ,  BESSON PASCAL ,  SEMERIA MARIE-NOELLE

IPC: B08B3/08 ,  H01L21/304 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306

Abstract: Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises bringing surface into contact with hydrofluoric acid solution; and rinsing surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes. Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises: bringing the surface into contact with an hydrofluoric acid (HF) solution with an HF concentration of 0.2-2 (preferably 1) vol.%, in deionized water, for =10 (preferably 4) minutes, the pH of the solution being maintained at 1-2, preferably 1, throughout the duration of the contacting; rinsing the surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes, the pH being maintained at =5 (preferably 3-5), throughout step (2); optionally repeating step (1), once or twice, while optionally reducing the contacting time, which is then preferably 30 seconds and 2 minutes, (preferably 1 minute to 30 seconds); optionally repeating step (2), once or twice; and drying the surface.

公开(公告)号：AT407753T

公开(公告)日：2008-09-15

申请号：AT04107061

申请日：2004-12-30

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ABBADIE ALEXANDRA ,  BESSON PASCAL ,  SEMERIA MARIE-NOELLE

IPC: B08B3/08 ,  H01L21/304 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306

Abstract: Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises bringing surface into contact with hydrofluoric acid solution; and rinsing surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes. Wet cleaning a surface made of silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and/or epitaxially grown crystalline materials, such as germanium, comprises: bringing the surface into contact with an hydrofluoric acid (HF) solution with an HF concentration of 0.2-2 (preferably 1) vol.%, in deionized water, for =10 (preferably 4) minutes, the pH of the solution being maintained at 1-2, preferably 1, throughout the duration of the contacting; rinsing the surface with acidified, deionized water for 1-5, preferably 3 minutes, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued for 5-10, preferably 7 minutes, the pH being maintained at =5 (preferably 3-5), throughout step (2); optionally repeating step (1), once or twice, while optionally reducing the contacting time, which is then preferably 30 seconds and 2 minutes, (preferably 1 minute to 30 seconds); optionally repeating step (2), once or twice; and drying the surface.